NTE5465 NTE Electronics, Inc., NTE5465 Datasheet
NTE5465
Manufacturer Part Number
NTE5465
Description
SCR; TO-220; 400V; 400V; 100A Itsm; 2; +100
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE5465.pdf
(2 pages)
Specifications of NTE5465
Current Squared Time Rating
40
Current, Forward
10 A
Current, Reverse
2 mA
Current, Surge
100 A
Package Type
TO-220
Primary Type
SCR
Resistance, Thermal, Junction To Case
2 °C/W
Temperature, Junction, Maximum
+100 °C
Temperature, Operating
-40 to +100 °C
Voltage, Forward
1.7 V
Voltage, Reverse
400 V
Description:
The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–
wave AC control applications such as motor controls, heating controls, and power supplies; or wher-
ever half–wave silicon gate–controlled, solid–state devices are needed. These devices are supplied
in a TO220 type package.
Features;
D Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
D Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation,
D Blocking Voltage to 800 Volts
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage; Peak Repetitive Off–State Voltage (Note 1), V
Non–Repetitive Peak Reverse Voltage; Non–Repetitive Off–State Voltage, V
RMS Forward Current (All Conducting Angles, T
Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, T
Circuit Fusing Considerations (T
Forward Peak gate Power (t
Forward Average Gate Power, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Note 1. V
and Durability
NTE5461
NTE5462
NTE5463
NTE5465
NTE5466
NTE5468
NTE5461
NTE5462
NTE5463
NTE5465
NTE5466
NTE5468
age. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias
applied to the gate concurrently with a negative potential on the anode.
DRM
and V
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RRM
for all types can be applied on a continuous DC basis without incurring dam-
Silicon Controlled Rectifier (SCR)
10 s), P
stg
J
G(AV)
NTE5461 thru NTE5468
= –65 to +100 C, t = 1 to 8.3ms), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10 Amp
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +75 C), I
C
T(RMS)
= +80 C), I
. . . . . . . . . . . . . . . . . . . . . .
2
t
TSM
. . . . . . . . . . . . . . . . .
RSM
. . . . . . . . . . . . . .
RRM
, V
–40 to +100 C
–40 to +150 C
DSM
, V
DRM
500mW
2 C/W
40A
100V
200V
400V
600V
800V
125V
250V
500V
700V
900V
100A
16W
50V
75V
10A
2
s
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NTE5465 Summary of contents
Page 1
... NTE5465 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics: (T Parameter Peak Forward or Reverse Blocking Current Instantaneous On–State Voltage Gate Trigger Current (Continuous DC) Gate Trigger Voltage (Continuous DC) Holding Current Gate Controlled Turn–On Time Circuit Commutated Turn–Off Time Critical Rate–of–Rise of Off–State Voltage .147 (3.75) ...