FEP30DP-E3/45 General Semiconductor / Vishay, FEP30DP-E3/45 Datasheet

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FEP30DP-E3/45

Manufacturer Part Number
FEP30DP-E3/45
Description
Rectifier, Ultrafast; Dual, 30 A (Max.) @ 100C IFAV@Tcase; 300A Ifrm; 200V VRSM
Manufacturer
General Semiconductor / Vishay
Datasheet

Specifications of FEP30DP-E3/45

Capacitance, Junction
175 pF
Configuration
Dual Common Cathode
Current, Forward
30 A
Current, Reverse
500 μA
Current, Surge
300 A
Package Type
TO-247AD (TO-3P)
Primary Type
Rectifier
Resistance, Thermal, Junction To Case
1 °C/W
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
35 ns
Voltage, Forward
0.95 V
Voltage, Reverse
200 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FEP30DP-E3/45
Manufacturer:
VISHAY
Quantity:
1 772
Part Number:
FEP30DP-E3/45
Manufacturer:
Vishay Semiconductors
Quantity:
102
Part Number:
FEP30DP-E3/45
Manufacturer:
VISHAY
Quantity:
150
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Operating storage and temperature range
C
= 100 °C
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
t
rr
F
TO-247AD (TO-3P)
PIN 1
PIN 3
Dual Common Cathode Ultrafast Rectifier
A
PIN 2
CASE
= 25 °C unless otherwise noted)
1
0.95 V, 1.3 V, 1.5 V
2
50 V to 600 V
35 ns, 50 ns
3
150 °C
300 A
30 A
SYMBOL
T
J
V
V
I
I
V
, T
F(AV)
FSM
RRM
RMS
DC
STG
30AP
FEP
50
35
50
30BP
FEP
100
100
70
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low thermal resistance
• High forward surge capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
30CP
FEP
150
105
150
Vishay General Semiconductor
30DP
FEP30AP thru FEP30JP
FEP
200
140
200
- 55 to + 150
300
30
30FP
FEP
300
210
300
30GP
FEP
400
280
400
30HP
FEP
500
350
500
30JP
FEP
600
420
600
UNIT
°C/W
V
V
V
A
A
1

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FEP30DP-E3/45 Summary of contents

Page 1

Dual Common Cathode Ultrafast Rectifier 2 1 TO-247AD (TO-3P) PIN 2 PIN 1 PIN 3 CASE PRIMARY CHARACTERISTICS I F(AV 600 V RRM I FSM 0.95 V, 1 ...

Page 2

FEP30AP thru FEP30JP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS SYMBOL Maximum instantaneous forward 15.0 A voltage per diode Maximum DC reverse current rated DC blocking voltage per diode Maximum reverse ...

Page 3

Pulse Width = 300 µ Duty Cycle T = 125 ° 0.1 0.2 0.4 0.6 0.8 1.0 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode 100 50 - 200 V ...

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