NTE264 NTE Electronics, Inc., NTE264 Datasheet
NTE264
Manufacturer Part Number
NTE264
Description
Transistor; PNP; Silicon; TO220; 100 V; 100 V; 5 V; 10 A; 250 mA; 65 W; NPN
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Powerr
Datasheet
1.NTE263.pdf
(2 pages)
Specifications of NTE264
Complement To
NPN
Current, Base
250 mA
Current, Collector Cutoff
20 μA @ VCB == 90V, IE == 0
Current, Continuous Collector
10 A
Current, Gain
100
Current, Input
250 mA
Current, Output
10 A
Material Type
Silicon
Package Type
TO-220
Polarity
PNP
Power Dissipation
65 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
62.5
Resistance, Thermal, Junction To Case
1.92 °C⁄W
Temperature Range, Junction, Operating
-65 to 150 °C
Thermal Resistance, Junction To Ambient
62.5 °C⁄W
Transistor Polarity
PNP
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Emitter To Base
5 V
Voltage, Input
5 V
Voltage, Output
100 V
Voltage, Saturation, Collector To Emitter
1.5 V (Max.) @ IC == 3A, IB == 0.3A
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain:
D Collector–Emitter Sustaining Voltage: V
D Low Collector–Emitter Saturation Voltage:
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature range, T
Storage Temperature range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Continuous
Peak
Derate Above 25 C
Derate Above 25 C
h
V
FE
CE(sat)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 2500 Typ (NTE263)
= 3500 Typ (NTE264)
= 2V Max @ I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
A
CB
C
NTE263 (NPN) & NTE264 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5A
D
D
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100V Min
–65 to +150 C
–65 to +150 C
0.016W/ C
0.52W/ C
1.92 C/W
62.5 C/W
250mA
100V
100V
65W
10A
15A
2W
5V
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NTE264 Summary of contents
Page 1
... NTE263 (NPN) & NTE264 (PNP) Silicon Complementary Transistors Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: D High DC Current Gain 2500 Typ (NTE263) ...
Page 2
... ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Small–Signal Current Gain Output Capacitance Small–Signal Current Gain Note 1. Pulse Test: Pulse Width NTE263 B NTE264 B = +25 C unless otherwise specified) C Symbol Test Conditions 200mA Note 1 CEO(sus) ...