SI4420BDY-T1-E3 Siliconix / Vishay, SI4420BDY-T1-E3 Datasheet
SI4420BDY-T1-E3
Manufacturer Part Number
SI4420BDY-T1-E3
Description
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ohm; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
Manufacturer
Siliconix / Vishay
Datasheet
1.SI4420BDY-T1-E3.pdf
(2 pages)
Specifications of SI4420BDY-T1-E3
Channel Type
N-Channel
Current, Drain
9.5 A
Fall Time
12 nS
Gate Charge, Total
16 nC
Mounting And Package Type
SO-8 Package
Operating And Storage Temperature
-55 to +150 °C
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
1.4 W
Resistance, Drain To Source On
0.007 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
40 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
50 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Diode Forward
0.75 V (Typ.)
Voltage, Forward, Diode
0.75 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4420BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 Board, t ≤ 10 sec.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Ordering Information: Si4420BDY-T1-E3 (Lead (Pb)-free)
DS
30
(V)
G
S
S
S
0.0110 at V
0.0085 at V
1
2
3
4
r
DS(on)
Top View
SO-8
J
a
GS
GS
= 150 °C)
a
(Ω)
= 4.5 V
= 10 V
N-Channel 30-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
I
D
13.5
11
A
New Product
(A)
Steady State
Steady State
= 25 °C, unless otherwise noted
L = 0.1 mH
T
T
T
T
t < 10 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• TrenchFET
• 100 % R
G
Symbol
Symbol
T
R
R
J
V
V
E
N-Channel MOSFET
I
I
P
, T
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
D
S
g
Tested
®
Power MOSFET
Typical
10 sec
13.5
10.8
2.3
2.5
1.6
40
70
23
- 55 to 150
± 20
30
50
20
20
Steady State
Maximum
1.26
9.5
7.5
1.4
0.9
50
90
28
Vishay Siliconix
Si4420BDY
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
Pb-free
1
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SI4420BDY-T1-E3 Summary of contents
Page 1
... Top View Ordering Information: Si4420BDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
Page 2
... Si4420BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge ...