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SUB75P03-07-E3
SUB75P03-07-E3 | |
|---|---|
| Manufacturer Part Number | SUB75P03-07-E3 |
| Description | MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.0055Ohm; ID -75A; TO-263; PD 187W; VGS +/-20V; gFS 20 |
| Manufacturer | Siliconix / Vishay |
| SUB75P03-07-E3 datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
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Specifications of SUB75P03-07-E3 | |||
|---|---|---|---|
| Current, Drain | -75 A | Gate Charge, Total | 160 nC |
| Package Type | TO-263 | Polarization | P-Channel |
| Power Dissipation | 187 W | Resistance, Drain To Source On | 0.0055 Ohm |
| Temperature, Operating, Maximum | +175 °C | Temperature, Operating, Minimum | -55 °C |
| Time, Turn-off Delay | 150 ns | Time, Turn-on Delay | 25 ns |
| Transconductance, Forward | 20 S | Voltage, Breakdown, Drain To Source | -30 V |
| Voltage, Forward, Diode | -1.2 V | Voltage, Gate To Source | ±20 V |
| Lead Free Status / Rohs Status | RoHS Compliant part | ||
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2
PrevNext
P-Channel 30-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
(V)
r
(Ω)
DS
DS(on)
0.007 at V
= - 10 V
GS
- 30
0.010 at V
= - 4.5 V
GS
TO-220AB
DRAIN connected to TAB
G D S
Top View
SUP75P03-07
Ordering Information: SUB75P03-07 (TO-263)
SUB75P03-07-E3 (TO-263, Lead (Pb)-free)
SUP75P03-07 (TO-220AB)
SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Gate-Source Voltage
Continuous Drain Current (T
= 175 °C)
J
Pulsed Drain Current
Avalanche Current
b
Repetitive Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. When Mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
a
I
(A)
D
± 75
± 75
TO-263
G
D
S
Top View
SUB75P03-07
= 25 °C, unless otherwise noted
C
Symbol
T
= 25 °C
C
T
= 125 °C
C
L = 0.1 mH
T
= 25 °C (TO-220AB and TO-263)
C
c
T
= 25 °C (TO-263)
A
c
PCB Mount (TO-263)
Free Air (TO-220AB)
SUP/SUB75P03-07
Vishay Siliconix
S
G
D
P-Channel MOSFET
Limit
V
± 20
GS
a
- 75
I
D
- 65
I
- 240
DM
I
- 60
AR
E
180
AR
d
187
P
D
3.75
T
, T
- 55 to 175
J
stg
Symbol
Limit
40
R
thJA
62.5
R
0.8
thJC
Available
RoHS*
COMPLIANT
Unit
V
A
mJ
W
°C
Unit
°C/W
1
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SUB75P03-07-E3 Summary of contents |
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