NTE162 NTE Electronics, Inc., NTE162 Datasheet
NTE162
Manufacturer Part Number
NTE162
Description
Transistor, NPN; TO-3; NPN; 400 V; 400 V; 5 V; 10 A; 125 W; -65 to 150 degC; 10
Manufacturer
NTE Electronics, Inc.
Type
High Voltage, Switchr
Datasheet
1.NTE162.pdf
(2 pages)
Specifications of NTE162
Current, Collector
10 A
Current, Gain
10
Device Dissipation
125 W
Frequency
2.5 MHz
Gain, Dc Current, Minimum
10
Package Type
TO-3
Polarity
NPN
Power Dissipation
125 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1 °C/W
Temperature, Junction, Operating
-65 to +150 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
325 V
Voltage, Collector To Base
400 V
Voltage, Collector To Emitter
400 V
Voltage, Collector To Emitter, Saturation
0.7 V
Voltage, Emitter To Base
5 V
Description:
The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters,
converters, regulators, and switching circuits.
Features:
D High Voltage: V
D Gain Specified to 3.5A
D High Frequency Response to 2.5MHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Base Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEX
= 400V
EBO
CB
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEX
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
V
(BR)CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
Symbol
TV Vertical Deflection
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CEX
300 s, Duty Cycle
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
T
V
NTE162
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
C
CE
BE
= 100mA, I
= +125 C
= 400V, V
= 5V, I
= 400V, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
= 0
B
EB(off)
EB(off)
= 0, Note 1
2%.
= 1.5V,
= 1.5V
Min
325
–
–
–
–65 to +150 C
–65 to +200 C
Typ Max Unit
–
–
–
–
2.5
1.0
2.0
–
1W/ C
1 C/W
125W
400V
400V
mA
mA
10A
V
5V
2A
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NTE162 Summary of contents
Page 1
... Description: The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage 400V CEX D Gain Specified to 3.5A D High Frequency Response to 2.5MHz Absolute Maximum Ratings: Collector–Emitter Voltage, V Collector–Base Voltage Emitter– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Dynamic Characteristics Current Gain–Bandwidth Product Note 1. Pulse Test: Pulse Width .350 (8.89) .312 (7.93) Min Emitter .215 (5.45) .430 (10.92) = ...