MCP1702T-5002E/CB Microchip Technology Inc., MCP1702T-5002E/CB Datasheet - Page 3

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MCP1702T-5002E/CB

Manufacturer Part Number
MCP1702T-5002E/CB
Description
LOW IQ 250MA LDO, VIN 10V MAX, VOUT=5.0V
Manufacturer
Microchip Technology Inc.
Type
Voltage Regulatorr
Datasheet

Specifications of MCP1702T-5002E/CB

Current, Output
250 mA
Current, Supply
2 μA
Package Type
SOT-23A
Power Dissipation
253 mW
Regulation, Line
±0.1 %/V
Regulation, Load
±1 %
Regulator Type
Low Dropout, Positive Voltage Out
Resistance, Thermal, Junction To Case
110 °C/W
Temperature, Operating, Range
-40 to +125 °C
Voltage, Dropout
330 mV
Voltage, Input
13.2 V
Voltage, Noise
8 μV/sqrt Hz
Voltage, Output
5 V
Voltage, Supply, Rejection Ratio
44 dB
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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MCP1702
DC CHARACTERISTICS (CONTINUED)
DS22008C-page 4
Electrical Specifications: Unless otherwise specified, all limits are established for V
I
Boldface type applies for junction temperatures, T
Dropout Voltage
(Note 1, Note 5)
Output Delay Time
Output Noise
Power Supply Ripple
Rejection Ratio
Thermal Shutdown Protec-
tion
Note 1:
LOAD
= 100 µA, C
2:
3:
4:
5:
6:
7:
Parameters
The minimum V
V
input voltage V
TCV
perature range. V
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
perature and the thermal resistance from junction to air (i.e., T
sipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction
temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
R
is the nominal regulator output voltage. For example: V
OUT
OUT
= (V
= 1 µF (X7R), C
OUT-HIGH
IN
IN
= V
OUT-LOW
must meet two conditions: V
V
OUT(MAX)
DROPOUT
T
PSRR
- V
Sym
DELAY
T
e
SD
N
OUT-LOW
IN
= lowest voltage measured over the temperature range.
= 1 µF (X7R), T
+ V
DROPOUT(MAX)
) *10
Min
J
6
OUT(MAX)
of -40°C to +125°C. (Note 7)
/ (V
R
A
* ΔTemperature), V
= +25°C.
IN
1000
Typ
330
525
625
750
150
44
or V
+ V
≥ 2.7V and V
8
DROPOUT(MAX)
IN
= 2.7V (whichever is greater); I
R
1100
Max
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V. The
650
725
975
IN
A
, T
OUT-HIGH
≥ V
J
, θ
or 2.7V, whichever is greater.
OUT(MAX)
µV/(Hz)
JA
). Exceeding the maximum allowable power dis-
Units
mV
mV
mV
mV
mV
IN
dB
µs
°C
= highest voltage measured over the
= V
1/2
+ V
OUT(MAX)
I
I
I
I
V
Current Parameter
V
R
I
f = 100 Hz, C
V
V
DROPOUT(MAX)
L
L
L
L
L
R
IN
INAC
R
L
= 250 mA, V
= 250 mA, 3.3V ≤ V
= 250 mA, 2.8V ≤ V
= 250 mA, 2.5V ≤ V
= 50 mA, f = 1 kHz, C
= 50Ω resistive
< 2.5V, See Maximum Output
= 1.2V
© 2008 Microchip Technology Inc.
= 0V to 6V, V
OUT
= 100 mV pk-pk, C
+ V
OUT
= 100 µA.
DROPOUT(MAX)
.
Conditions
OUT
.
R
= 5.0V
OUT
= 1 µF, I
= 90% V
R
R
R
< 5.0V
< 3.3V
< 2.8V
OUT
, Note 1,
IN
L
= 50 mA,
= 0 µF,
= 1 µF
R
tem-
tem-

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