NTE573 NTE Electronics, Inc., NTE573 Datasheet
NTE573
Manufacturer Part Number
NTE573
Description
Rectifier, Schottky; SMB; 15A IF; 0.95V; 60V; 0.250A IFRM
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE573.pdf
(2 pages)
Specifications of NTE573
Capacitance, Junction
400 pF
Configuration
Single Phase
Current, Forward
5 A
Current, Reverse
50 mA
Current, Surge
150 A
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-65 to +125 °C
Voltage, Forward
0.7 V
Voltage, Reverse
60 V
Description:
The NTE573 is an axial lead metal-to-silicon power diode using the Schottky Barrier principle. State-
of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.
This device is ideally suited for use in low-voltage, high-frequency inverters, as free wheeling diodes,
and polarity protection diodes.
Features:
D Low Forward Voltage
D Low Power Loss
D High Surge Capacity
D Low Stored Charge Majority Carrier Conduction
D High Efficiency
D High Switching Capability
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, V
Working Peak Reverse Voltage, V
DC Blocking Voltage, V
RMS Reverse Voltage, V
Average Forward Rectified Current, I
Non-Repetitive Peak Surge Current, I
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics:
Note 1. Measured at 1MHz and applied reverse voltage of 4 volts.
Instantaneous Forward Voltage
Instantaneous Reverse Current
Junction Capacitance
(Surge applied at rated load conditions half-wave, single phase, 60Hz, T
Parameter
R
R(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Schottky Barrier Rectifier
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RWM
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
O
C
V
I
R
FSM
F
P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
I
I
V
V
Note 1
NTE573
F
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
R
= 5A
= 15A
= 60V, T
= 60V, T
Test Conditions
L
L
= +25°C
= +100°C
Min
-
-
-
-
-
L
Typ
400
= +70°C)
-
-
-
-
-65° to +125°C
-65° to +125°C
Max Unit
0.70
0.95
50
5
-
.
150A
mA
mA
pF
V
V
60V
60V
60V
42V
5A
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NTE573 Summary of contents
Page 1
... Description: The NTE573 is an axial lead metal-to-silicon power diode using the Schottky Barrier principle. State- of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. This device is ideally suited for use in low-voltage, high-frequency inverters, as free wheeling diodes, and polarity protection diodes. ...
Page 2
Min .050 (1.27) Dia Max Color Band Denotes Cathode .371 (9.4) Max .250 (6.35) Dia Max ...