SI4848DY-T1-E3 Siliconix / Vishay, SI4848DY-T1-E3 Datasheet

no-image

SI4848DY-T1-E3

Manufacturer Part Number
SI4848DY-T1-E3
Description
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.068Ohm; ID 2.7A; SO-8; PD 1.5W; VGS +/-20V
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SI4848DY-T1-E3

Channel Type
N
Current, Drain
3.70 A
Gate Charge, Total
17 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
1.5 W
Resistance, Drain To Source On
0.085 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
24 ns
Time, Turn-on Delay
9 ns
Transconductance, Forward
15 S
Voltage, Breakdown, Drain To Source
150 V
Voltage, Drain To Source
150 V
Voltage, Forward, Diode
0.75 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4848DY-T1-E3
Manufacturer:
VISHAY
Quantity:
1 798
Part Number:
SI4848DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4848DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4848DY-T1-E3
0
Company:
Part Number:
SI4848DY-T1-E3
Quantity:
5 000
Company:
Part Number:
SI4848DY-T1-E3
Quantity:
7 500
Company:
Part Number:
SI4848DY-T1-E3
Quantity:
70 000
Notes
a.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
Ordering Information: Si4848DY
150
150
(V)
J
ti
G
S
S
S
t A bi
1
2
3
4
J
J
a
a
Si4848DY-T1 (with Tape and Reel)
0.095 @ V
0.085 @ V
= 150_C)
= 150_C)
t
a
a
Top View
Parameter
Parameter
SO-8
r
DS(on)
a
a
GS
GS
N-Channel 150-V (D-S) MOSFET
(W)
= 6.0 V
= 10 V
8
7
6
5
a
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
3.7
3.5
(A)
G
N-Channel MOSFET
Symbol
Symbol
T
R
R
R
V
V
J
I
I
P
P
, T
DM
I
I
AS
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
D
S
10 secs
Typical
3.7
3.0
2.5
3.0
1.9
35
68
18
-55 to 150
"20
150
25
10
Steady State
Maximum
Vishay Siliconix
2.7
2.1
1.3
1.5
1.0
42
82
23
Si4848DY
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
1

Related parts for SI4848DY-T1-E3

SI4848DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4848DY Si4848DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction Maximum Power Dissipation ...

Page 2

... Si4848DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Related keywords