2SK3554-01 Fuji Semiconductor, 2SK3554-01 Datasheet
2SK3554-01
Manufacturer Part Number
2SK3554-01
Description
MOSFET, Power; N-Ch; VDSS 250V; RDS(ON) 75 Milliohms; ID +/-37A; TO-220AB; PD 270W; -55
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3554-01.pdf
(1 pages)
Specifications of 2SK3554-01
Application
Switching regulators, uninterruptible power Supply, DC-DC Converters
Channel Type
N-Channel
Current, Drain
±37 A
Gate Charge, Total
44 nC
Operating And Storage Temperature
-55 to 150 °C
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
270 W
Resistance, Drain To Source On
75 Milliohms
Resistance, Thermal, Junction To Case
0.463 °C⁄W (Max.)
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Turn-off Delay
60 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
16 S
Voltage, Breakdown, Drain To Source
250 V
Voltage, Diode Forward
1.10 V (Typ.)
Voltage, Drain To Source
250 V
Voltage, Forward, Diode
1.1 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3554-01
Manufacturer:
FJUI
Quantity:
4 250
Company:
Part Number:
2SK3554-01
Manufacturer:
FUJITSU
Quantity:
12 500
2SK3554-01
Super FAP-G Series
*1 L=309µH, Vcc=48V, See to Avalanche Energy Graph
FUJI POWER MOSFET
*3 I
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
F
<
=-I
D
, -di/dt=50A/µs, Vcc=BV
off
on
<
DSS
c
, Tch=150°C
=25°C unless otherwise specified)
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR *2
Symbol
ch
stg
DSX *5
AS *1
D
DS
GS
<
DS
R
R
Symbol
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
I
/dt
GSS
AV
f
DSS
r
rr
*3
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
G
GS
SD
(on)
(off)
GD
rr
*4
*4 V
Absolute maximum ratings
Ratings
DS
-55 to +150
Test Conditions
*2 Tch=150°C
= <
Test Conditions
I
I
V
V
V
V
f=1MHz
V
V
R
V
I
V
L=309 µ H T
I
I
-di/dt=100A/µs
V
I
I
channel to ambient
channel to case
D
D
D
F
F
D
D
250V
±148
+150
DS
DS
DS
GS
CC
GS
GS
GS
GS
CC
=25A V
=25A V
=250 µ A
= 250 µ A
=12A
=12.5A
=12.5A
250
220
±37
±30
251.9
270
=250V V
=200V V
=72V I
=10
37
20
=±30V
=75V
=0V
=10V
=10V
=72V
5
2.02
<
N-CHANNEL SILICON POWER MOSFET
*5 V
GS
GS
ch
D
V
V
V
=0V T
=12.5A
=0V
=25°C
DS
GS
GS
GS
DS
V
GS
V
DS
GS
=0V
=0V
=0V
=10V
=25V
=-30V
T
=V
=0V
ch
ch
=25°C
kV/µs
kV/µs
W
°C
°C
Unit
mJ
GS
V
V
A
A
V
A
=25°C
T
T
ch
ch
=125°C
=25°C
TO-220AB
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
8
250
37
3.0
2000
Typ.
Typ.
220
10
75
16
15
20
30
60
20
44
14
16
1.10
0.45
1.5
Source(S)
Drain(D)
3000
Max.
250
100
100
330
62.0
Max.
25
30
30
45
90
30
66
21
24
0.463
5.0
1.65
Units
Units
200304
°C/W
°C/W
ns
V
V
µA
nA
m
S
pF
nC
A
V
µs
µC
1
Related parts for 2SK3554-01
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
N-CHANNEL SILICON POWER MOSFET
Manufacturer:
Fuji Electric
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 7.5 Milliohms; ID +/-80A; TO-3P; PD 125W; VGS +/
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.2Ohm; ID +/-25A; TO-247; PD 335W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.08 Ohms; ID +/-40A; TO-247; PD 270W; VGS +/-3
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.29Ohm; ID +/-21A; TO-3PF; PD 160W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.12Ohm; ID +/-43A; TO-247; PD 600W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 5.7 Milliohms; ID +/-100A; TO-3PF; PD 125W; VF 1
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.09Ohm; ID +/-52A; TO-247; PD 600W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.46 Ohms; ID +/-7A; TO-220AB; PD 195W; VGS +/-
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.62 Ohms; ID +/-7A; TO-3P; PD 125W; VGS +/-35V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.54 Ohms; ID +/-7A; TO-247; PD 195W; VGS +/-30
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.29Ohm; ID +/-19A; TO-220AB; PD 270W; VGS +/-3
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 5 Milliohms; ID +/-80A; TO-220; PD 135W; VGS +/-
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.58Ohm; ID +/-12A; TO-220AB; PD 195W; VGS +/-3
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.33Ohm; ID +/-20A; TO-3P; PD 150W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet: