IRFP450PBF Vishay PCS, IRFP450PBF Datasheet

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IRFP450PBF

Manufacturer Part Number
IRFP450PBF
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.4Ohm; ID 14A; TO-247AC; PD 190W; VGS +/-20V
Manufacturer
Vishay PCS
Datasheet

Specifications of IRFP450PBF

Current, Drain
14 A
Gate Charge, Total
150 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
190 W
Resistance, Drain To Source On
0.4 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
92 ns
Time, Turn-on Delay
17 ns
Transconductance, Forward
9.3 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Forward, Diode
1.4 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91233
S-81271-Rev. A, 16-Jun-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 14 A, dI/dt ≤ 130 A/µs, V
= 50 V, starting T
(Ω)
TO-247
a
G
J
D
= 25 °C, L = 7.0 mH, R
S
c
a
a
DD
b
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
500
150
20
80
G
= 25 Ω, I
D
S
C
Power MOSFET
0.40
= 25 °C, unless otherwise noted
V
GS
AS
6-32 or M3 screw
at 10 V
= 14 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247
IRFP450PbF
SiHFP450-E3
IRFP450
SiHFP450
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to
meet the requirements of most safety specifications.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRFP450, SiHFP450
design,
- 55 to + 150
LIMIT
300
± 20
500
760
190
8.7
1.5
8.7
3.5
1.1
14
56
19
10
low
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFP450PBF Summary of contents

Page 1

... TO-220 devices. The TO-247 is similar but superior to the S earlier TO-218 package because its isolated mounting hole. N-Channel MOSFET It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247 IRFP450PbF SiHFP450-E3 IRFP450 SiHFP450 = 25 °C, unless otherwise noted °C ...

Page 2

IRFP450, SiHFP450 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...

Page 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91233 S-81271-Rev. A, 16-Jun- °C Fig Typical Transfer Characteristics C = 150 °C ...

Page 4

IRFP450, SiHFP450 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: ...

Page 5

Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required I AS D.U 0.01 Ω ...

Page 6

IRFP450, SiHFP450 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 ...

Page 7

D.U Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim ...

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