SUD25N06-45L-E3 Siliconix / Vishay, SUD25N06-45L-E3 Datasheet

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SUD25N06-45L-E3

Manufacturer Part Number
SUD25N06-45L-E3
Description
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.025Ohm; ID 25A; TO-252; PD 50W; VGS +/-20V; -55
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SUD25N06-45L-E3

Channel Type
N
Current, Drain
25 A
Gate Charge, Total
26 nC
Package Type
TO-252
Polarization
N-Channel
Power Dissipation
50 W
Resistance, Drain To Source On
0.025 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
–55 °C
Time, Turn-off Delay
31 ns
Time, Turn-on Delay
10 ns
Transconductance, Forward
25 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Notes:
a.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface mounted on 1” x 1” FR4 Board.
DS
60
60
(V)
N-Channel 60-V (D-S), 175 C MOSFET, Logic Level
SUD25N06-45L
Order Number:
J
J
0.045 @ V
0.035 @ V
G
= 175 C)
= 175 C)
a
Top View
TO-252
r
DS(on)
D
Parameter
Parameter
S
GS
GS
( )
= 4.5 V
= 10 V
1%)
Drain Connected to Tab
I
T
L = 0.1 mH
T
T
D
T
C
C
C
A
25
22
(A)
= 100 C
= 25 C
= 25 C
= 25 C
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
P
DM
, T
I
I
AR
thJA
thJC
I
GS
DS
AR
D
D
S
D
D
N-Channel MOSFET
stg
G
D
S
–55 to 175
Limit
Limit
2.5
SUD25N06-45L
3.0
60
25
16
30
25
25
31
50
60
20
Vishay Siliconix
a
Unit
Unit
mJ
C/W
C/W
W
W
V
V
A
A
A
C
2-1

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SUD25N06-45L-E3 Summary of contents

Page 1

... Operating Junction and Storage Temperature Range Parameter a Maximum Junction-to-Ambient Maximum Junction-to-Case Notes: a. Surface mounted on 1” x 1” FR4 Board Drain Connected to Tab N-Channel MOSFET Symbol 100 0 stg Symbol R thJA R thJC SUD25N06-45L Vishay Siliconix D S Limit Unit 2.5 –55 to 175 C Limit Unit 60 C/W C/W 3.0 2-1 ...

Page 2

... SUD25N06-45L Vishay Siliconix Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge c Gate-Source Charge ...

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