NTE2394 NTE Electronics, Inc., NTE2394 Datasheet
NTE2394
Manufacturer Part Number
NTE2394
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.4Ohm; ID 14A; PD 180W; VGS +/-20V; gFS 9.3Mho
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2394.pdf
(3 pages)
Specifications of NTE2394
Application
Switching mode power supplies, uninterruptible power supplies and motor speed control
Channel Type
N-Channel
Current, Drain
14 A
Fall Time
70 ns (Max.)
Gate Charge, Total
120 nC
Operating And Storage Temperature
-55 to +150 °C
Polarization
N-Channel
Power Dissipation
180 W
Resistance, Drain To Source On
0.4 Ohm
Resistance, Thermal, Junction To Case
0.69 °C⁄W
Temperature, Operating, Maximum
+150 °C
Thermal Resistance, Junction To Ambient
30 °C⁄W
Time, Rise
50 ns (Max.)
Time, Turn-off Delay
150 ns
Time, Turn-on Delay
35 ns
Transconductance, Forward
9.3 Mhos
Voltage, Breakdown, Drain To Source
500 V
Voltage, Diode Forward
1.4 V (Max.)
Voltage, Drain To Gate
500 V
Voltage, Forward, Diode
1.4 V
Voltage, Gate To Source
±20 V
High Voltage
450 V for off-line SMPS
High Current
12 A for up to 350 W SMPS
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE2394 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D High Voltage: 450V for Off–Line SMPS
D High Current: 12A for up to 350W SMPS
D Ultra Fast Switching for Operation at less than 100kHz
Industrial Applications:
D Switching Mode Power Supplies
D Motor Controls
Absolute Maximum Ratings:
Drain–Source Voltage (V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Pulsed Drain Current (Note 2), I
Clamped Drain Inductive Current (L = 100 H), I
Continuous Drain Current, I
Total Dissipation (T
Maximum Operating Junction Temperature, T
Storage Temperature Range, T
Note 1. T
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
T
T
Derate Above 25 C
C
C
= +25 C
= +100 C
J
= +25 to +125 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
GS
GS
GS
= 20k
N–Channel Enhancement Mode,
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
= 0, Note 1), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
DM
tot
Note 1), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2394
DS
MOSFET
DGR
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DLM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55 to +150 C
1.44W/ C
+150 C
180W
500V
500V
8.8A
20V
56A
56A
14A
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NTE2394 Summary of contents
Page 1
... N–Channel Enhancement Mode, Description: The NTE2394 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control ...
Page 2
Thermal Data: Maximum Thermal Resistance, Junction–to–Case, R Typical Thermal Resistance, Case–to–Sink, R Maximum Thermal Resistance, Junction–to–Ambient, R Maximum Lead Temperature (During Soldering), T Electrical Characteristics: (T Parameter OFF Characteristics Drain–Source Breakdown Voltage Zero–Gate Voltage Drain Current Gate–Body Leakage Current ON ...
Page 3
D .591 .787 G D .215 (5.47) .126 (3.22) Dia S ...