SI2302ADS-T1-E3 Siliconix / Vishay, SI2302ADS-T1-E3 Datasheet
SI2302ADS-T1-E3
Manufacturer Part Number
SI2302ADS-T1-E3
Description
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.045Ohm; ID 2.1A; TO-236 (SOT-23); PD 0.7W
Manufacturer
Siliconix / Vishay
Datasheet
1.SI2302ADS-T1-E3.pdf
(2 pages)
Specifications of SI2302ADS-T1-E3
Channel Type
N
Current, Drain
2.1 A
Fall Time
25 ns
Gate Charge, Total
4 nC
Operating And Storage Temperature
–55 to +150 °C
Package Type
TO-236 (SOT-23)
Polarization
N-Channel
Power Dissipation
0.7 W
Resistance, Drain To Source On
0.045 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
140 °C/W
Time, Rise
80 ns
Time, Turn-off Delay
16 ns
Time, Turn-on Delay
7 ns
Transconductance, Forward
8 S
Voltage, Breakdown, Drain To Source
20 V
Voltage, Diode Forward
1.2 V
Voltage, Drain To Source
20 V
Voltage, Forward, Diode
0.76 V
Voltage, Gate To Source
±8 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI2302ADS-T1-E3
Manufacturer:
VISHAY
Quantity:
3 105
Company:
Part Number:
SI2302ADS-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
45 841
Part Number:
SI2302ADS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
PRODUCT SUMMARY
V
DS
20
(V)
a
a
0.060 at V
0.115 at V
R
J
= 150 °C)
DS(on)
a
N-Channel 1.25-W, 2.5-V MOSFET
GS
GS
(Ω)
= 4.5 V
= 2.5 V
a
Ordering Information: Si2302ADS-T1
a
A
Steady State
= 25 °C, unless otherwise noted
T
T
T
T
G
A
A
A
A
I
S
t ≤ 5 s
D
2.4
2.0
= 25 °C
= 70 °C
= 25 °C
= 70 °C
(A)
1
2
Si2302ADS-T1-E3 (Lead (Pb)-free)
Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)
Si2302ADS (2A)*
* Marking Code
(SOT-23)
Top View
TO-236
Symbol
FEATURES
Symbol
T
• Halogen-free Option Available
R
J
V
V
I
thJA
P
, T
I
DM
I
DS
GS
D
S
3
D
stg
D
Typical
0.94
0.57
115
140
5 s
2.4
1.9
0.9
- 55 to 150
± 8
20
10
Steady State
Maximum
0.46
140
175
2.1
1.7
0.6
0.7
Vishay Siliconix
Si2302ADS
°C/W
Unit
Unit
°C
W
V
A
RoHS*
COMPLIANT
Available
Pb-free
1
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SI2302ADS-T1-E3 Summary of contents
Page 1
... Pb containing terminations are not RoHS compliant, exemptions may apply FEATURES • Halogen-free Option Available I (A) D 2.4 2.0 TO-236 (SOT-23 Top View Si2302ADS (2A)* * Marking Code Ordering Information: Si2302ADS-T1 Si2302ADS-T1-E3 (Lead (Pb)-free) Si2302ADS-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ...
Page 2
... Si2302ADS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...