74HC244D,652 Philips Semiconductors, 74HC244D,652 Datasheet

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74HC244D,652

Manufacturer Part Number
74HC244D,652
Description
BUFFER; SOIC; -40; +125
Manufacturer
Philips Semiconductors
Datasheet

Specifications of 74HC244D,652

Capacitance, Input, Maximum
3.5 pF
Circuit Type
High Speed, Low-Power Schottky, Silicon Gate
Current, Supply
160 μA
Logic Function
Buffer/Driver
Logic Type
CMOS
Number Of Circuits
Octal
Package Type
SO-20
Propagation Delay
9 ns
Special Features
Bus, Non-Inverting, Tri-State
Temperature, Operating, Range
-40 to +125 °C
Voltage, Supply
5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
1. General description
2. Features
3. Quick reference data
The 74HC244; 74HCT244 is a high-speed Si-gate CMOS device and is pin compatible
with Low-power Schottky TTL (LSTTL).
The 74HC244; 74HCT244 has octal non-inverting buffer/line drivers with 3-state outputs.
The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH on
nOE causes the outputs to assume a high-impedance OFF-state. The 74HC244;
74HCT244 is identical to the 74HC240; 74HCT240 but has non-inverting outputs.
Table 1:
GND = 0 V; T
[1]
Symbol Parameter
74HC244
t
t
C
C
74HCT244
t
t
C
C
PHL
PLH
PHL
PLH
i
PD
i
PD
74HC244; 74HCT244
Octal buffer/line driver; 3-state
Octal bus interface
Non-inverting 3-state outputs
Complies with JEDEC standard no. 7A
ESD protection:
Multiple package options
Specified from 40 C to +85 C and from 40 C to +125 C
,
,
C
P
D
PD
HBM EIA/JESD22-A114-C exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
= C
is used to determine the dynamic power dissipation (P
propagation delay
nAn to nYn
input capacitance
power dissipation
capacitance
propagation delay
nAn to nYn
input capacitance
power dissipation
capacitance
PD
Quick reference data
amb
V
CC
= 25 C; t
2
f
i
N + (C
r
= t
f
= 6 ns
L
Conditions
V
per buffer; V
V
V
per buffer; V
(V
V
CC
CC
CC
CC
CC
2
= 5 V; C
= 5 V; C
1.5 V)
f
o
) where:
I
I
L
L
= GND to
= GND to
= 15 pF
= 15 pF
D
in W):
[1]
[1]
Product data sheet
Min
-
-
-
-
-
-
Typ
9
3.5
35
11
3.5
35
Max
-
-
-
-
-
-
Unit
ns
pF
pF
ns
pF
pF

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74HC244D,652 Summary of contents

Page 1

Octal buffer/line driver; 3-state 1. General description The 74HC244; 74HCT244 is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL (LSTTL). The 74HC244; 74HCT244 has octal non-inverting buffer/line drivers with 3-state outputs. The 3-state ...

Page 2

... Philips Semiconductors f = input frequency in MHz output frequency in MHz output load capacitance in pF number of inputs switching Ordering information Table 2: Ordering information Type number Package Temperature range Name 74HC244 74HC244N +125 C 74HC244D +125 C 74HC244DB +125 C 74HC244PW +125 C 74HC244BQ +125 C 74HCT244 74HCT244N +125 C 74HCT244D ...

Page 3

... Philips Semiconductors Table 3: Symbol 2A1 1Y1 2A0 1Y0 2OE Functional description 7.1 Function table Table 4: Control nOE HIGH voltage level LOW voltage level don’t care high-impedance OFF-state. 8. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V) ...

Page 4

... Philips Semiconductors [1] For DIP20 package: P [2] For SO20 package: P [3] For SSOP20 and TSSOP20 packages: P [4] For DHVQFN20 packages Recommended operating conditions Table 6: Symbol 74HC244 amb 74HCT244 amb 10. Static characteristics Table 7: Static characteristics 74HC244 At recommended operating conditions; voltages are referenced to GND (ground = 0V). ...

Page 5

... Philips Semiconductors Table 7: Static characteristics 74HC244 At recommended operating conditions; voltages are referenced to GND (ground = 0V). Symbol Parameter V LOW-state output voltage OL I input leakage current LI I OFF-state output current OZ I quiescent supply current CC C input capacitance +85 C amb V HIGH-state input voltage IH V LOW-state input voltage ...

Page 6

... Philips Semiconductors Table 7: Static characteristics 74HC244 At recommended operating conditions; voltages are referenced to GND (ground = 0V). Symbol Parameter +125 C amb V HIGH-state input voltage IH V LOW-state input voltage IL V HIGH-state output voltage OH V LOW-state output voltage OL I input leakage current LI I OFF-state output current ...

Page 7

... Philips Semiconductors Table 8: Static characteristics 74HCT244 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I additional quiescent supply CC current C input capacitance +85 C amb V HIGH-state input voltage IH V LOW-state input voltage IL V HIGH-state output voltage OH V LOW-state output voltage OL I input leakage current ...

Page 8

... Philips Semiconductors 11. Dynamic characteristics Table 9: Dynamic characteristics 74HC244 GND = ns unless otherwise specified; for test circuit see Symbol Parameter amb t , propagation delay nAn to nYn see PHL t PLH t , 3-state output enable time PZH t nOE to nYn PZL t , 3-state output disable time PHZ t nOE to nYn ...

Page 9

... Philips Semiconductors Table 9: Dynamic characteristics 74HC244 GND = ns unless otherwise specified; for test circuit see Symbol Parameter +125 C amb t , propagation delay nAn to nYn see PHL t PLH t , 3-state output enable time PZH t nOE to nYn PZL t , 3-state output disable time PHZ t nOE to nYn ...

Page 10

... Philips Semiconductors Table 10: Dynamic characteristics type 74HCT244 GND = ns unless otherwise specified; for test circuit see Symbol Parameter +85 C amb t , propagation delay nAn to nYn V PHL t PLH t , 3-state output enable time PZH t nOE to nYn PZL t , 3-state output disable time PHZ t nOE to nYn ...

Page 11

... Philips Semiconductors SO20: plastic small outline package; 20 leads; body width 7 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.3 2.45 2.65 mm 0.25 0.1 2.25 0.012 0.096 0.1 inches 0.01 0.004 0.089 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...

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