SI4412DY-T1-E3 Siliconix / Vishay, SI4412DY-T1-E3 Datasheet
SI4412DY-T1-E3
Manufacturer Part Number
SI4412DY-T1-E3
Description
MOSFET; N-Ch; VDSS 30V; RDS(ON) 0.028 Ohm; ID +/-7A; SO-8; PD 2.5W; VGS +/-20V; gFS 16S
Manufacturer
Siliconix / Vishay
Datasheet
1.SI4412DY-T1-E3.pdf
(2 pages)
Specifications of SI4412DY-T1-E3
Current, Drain
±7 A
Gate Charge, Total
19.5 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
0.028 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
38 ns
Time, Turn-on Delay
9 ns
Transconductance, Forward
16 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Forward, Diode
1.1 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4412DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Product Summary
Absolute Maximum Ratings (
Thermal Resistance Ratings
Notes
a.
N-Channel 30-V (D-S) Rated MOSFET
Siliconix
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t
DS
30
30
G
S
S
S
(V)
1
2
3
4
Top View
SO-8
0.042 @ V
0.028 @ V
J
J
a
a
r
= 150 C)
= 150 C)
a
DS(on)
8
7
6
5
Parameter
Parameter
GS
GS
a
a
D
D
D
D
( )
10 sec.
= 4.5 V
= 10 V
a
T
A
I
D
= 25 C Unless Otherwise Noted
(A)
7.0
5.8
T
T
T
T
A
A
A
A
G
= 25 C
= 70 C
= 25 C
= 70 C
N-Channel MOSFET
D
D D
S
S
Symbol
S
Symbol
D
T
R
V
V
I
J
P
P
, T
I
I
DM
I
thJA
DS
GS
D
D
S
D
D
stg
Si4412DY
–55 to 150
Limit
Limit
2.3
2.5
1.6
30
50
7.0
5.8
20
30
)
1
Unit
Unit
C/W
W
W
V
V
A
A
C
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SI4412DY-T1-E3 Summary of contents
Page 1
... Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Ratings Parameter a Maximum Junction-to-Ambient Notes a. Surface Mounted on FR4 Board sec. Siliconix I (A) D 7.0 5 N-Channel MOSFET Unless Otherwise Noted Si4412DY Symbol Limit 7 5 2 –55 to 150 J stg Symbol Limit R 50 ...
Page 2
... Si4412DY Specifications ( Unless Otherwise Noted) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge ...