NTE160 NTE Electronics, Inc., NTE160 Datasheet
NTE160
Manufacturer Part Number
NTE160
Description
Transistor; RF-IF; PNP; 20 V; 10 mA; 60 mW; 400 degC/W; 0.3 V; 50 (Typ.); TO-72
Manufacturer
NTE Electronics, Inc.
Type
IF Amplifier, Oscillator, RFr
Datasheet
1.NTE160.pdf
(2 pages)
Specifications of NTE160
Amplifier Type
RF-IF
Current, Collector
10 mA
Current, Gain
42
Frequency
700 MHz
Package Type
TO-72
Polarity
PNP
Power Dissipation
60 mW
Primary Type
Ge
Resistance, Thermal, Junction To Case
400 °C/W
Temperature, Operating, Maximum
90 °C
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Emitter
16 V
Voltage, Collector To Emitter
16 V
Voltage, Emitter To Base
0.3 V
Description:
The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a pream-
plifier mixer and oscillator up to 900MHz.
Absolute Maximum Ratings:
Collector–Emitter Voltage (V
Collector–Emitter Voltage, (I
Emitter–Base Voltage (I
Collector Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
Base–Emitter Voltage
DC Current Gain
Transition Frequency
Reverse Capacitance
Noise Figure
Power Gain
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 0), V
A
= +45 C), P
B
BE
Symbol
Germanium PNP Transistor
= 0), V
RF–IF Amp, FM Mixer OSC
I
I
–C
I
V
G
h
CEO
EBO
CES
NF
stg
C
f
= 0), V
FE
BE
T
pb
EBO
re
= +25 C unless otherwise specified)
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
I
I
I
I
I
I
I
f = 800MHz
I
f = 800MHz
CES
C
C
C
C
C
C
C
C
CE
CE
EB
tot
= –2mA, V
= –5mA, V
= –2mA, V
= –5mA, V
= –2mA, V
= –2mA, V
= –2mA, V
= –2mA, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= –0.3V, I
= –20V, V
= –15V, I
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE160
thJA
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
CE
CE
CE
CE
CE
CE
B
C
BE
= 0
= –10V, f = 100MHz
= –10V, f = 450kHz
= 0
= –10V
= –5V
= –10V
= –5V
= –10V, R
= –10V, R
= 0
g
L
= 60
= 2k
Min
11
–
–
–
–
–
–
–
–
–
–
–350
–400
0.23
Typ
700
50
42
14
–
–
–
5
–30 to +75 C
400 C/W max
750 C/W max
–500
–100
Max
–8
–
–
–
–
–
–
6
–
60mW
+90 C
10mA
MHz
Unit
mV
mV
pF
dB
dB
0.3V
20V
16V
A
A
A
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NTE160 Summary of contents
Page 1
... Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a pream- plifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage (V Collector–Emitter Voltage, (I Emitter–Base Voltage ( Collector Current Total Power Dissipation (T ...
Page 2
Min Emitter 45 .040 (1.02) .220 (5.58) Dia Max .185 (4.7) Dia Max .030 (.762) Max .018 (0.45) Base Collector Case ...