SUP40N25-60-E3 Siliconix / Vishay, SUP40N25-60-E3 Datasheet

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SUP40N25-60-E3

Manufacturer Part Number
SUP40N25-60-E3
Description
MOSFET, Power; N-Ch; VDSS 250V; RDS(ON) 0.049Ohm; ID 40A; TO-220AB; PD 300W; VGS +/-30V
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SUP40N25-60-E3

Application
Industrial
Channel Type
N-Channel
Current, Drain
40 A
Fall Time
145 nS
Gate Charge, Total
95 nC
Mounting And Package Type
PCB Mount and TO-220AB
Operating And Storage Temperature
-55 to +175 °C
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
300 W
Resistance, Drain To Source On
0.049 Ohm
Resistance, Thermal, Junction To Case
0.5 °C⁄W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
40 °C⁄W
Time, Rise
220 nS
Time, Turn-off Delay
40 ns
Time, Turn-on Delay
22 ns
Transconductance, Forward
70 S
Voltage, Breakdown, Drain To Source
250 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Notes
a.
b.
c.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
V
Duty cycle v 1%.
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
(BR)DSS
250
250
Ordering Information: SUP40N25-60—E3
(V)
TO-220AB
Top View
0.060 @ V
G D S
0.064 @ V
J
J
a
a
a
r
= 175_C)
= 175_C)
DS(on)
N-Channel 250-V (D-S) 175_C MOSFET
c
Parameter
Parameter
GS
GS
(W)
= 10 V
= 6 V
I
D
38.7
40
(A)
T
L = 0.1 mH
T
T
T
C
A
C
C
C
= 125_C
= 25_C
= 25_C
= 25_C
= 25_C UNLESS OTHERWISE NOTED)
New Product
c
Q
g
95
95
(Typ)
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
P
, T
DM
thJA
thJC
I
I
AR
GS
DS
AR
D
D
D
D
stg
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D New Low Thermal Resistance Package
APPLICATIONS
D Industrial
G
N-Channel MOSFET
D
S
−55 to 175
Limit
Limit
"30
300
3.75
250
0.5
40
23
70
35
61
40
b
Vishay Siliconix
SUP40N25-60
Unit
Unit
_C/W
_C/W
mJ
_C
W
W
V
A
A
1

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SUP40N25-60-E3 Summary of contents

Page 1

... V (V) r (W) (BR)DSS DS(on) 0.060 @ 250 250 0.064 @ TO-220AB Top View Ordering Information: SUP40N25-60—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy a a Maximum Power Dissipation ...

Page 2

... SUP40N25-60 Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

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