NTE5402 NTE Electronics, Inc., NTE5402 Datasheet

no-image

NTE5402

Manufacturer Part Number
NTE5402
Description
SCR; TO-92; 100 V; 8; 0.8 A; 1.7 V; 5 degC/W; 50 uA (Typ.); -40 degC; 100 deg
Manufacturer
NTE Electronics, Inc.
Datasheet

Specifications of NTE5402

Current Squared Time Rating
0.15
Current, Forward
0.8 A
Current, Gate Trigger
50 uA (Typ.)
Current, On-state, Rms, Maximum
0.8 A
Current, Reverse
50 μA
Current, Surge
8 A
Current, Surge, Peak
8
Package Type
TO-92
Power Dissipation
200 mW
Primary Type
SCR
Resistance, Thermal, Junction To Case
+5 °C/W
Temperature, Junction, Maximum
+100 °C
Temperature, Operating
-40 to +100 °C
Temperature, Operating, Maximum
100 °C
Temperature, Operating, Minimum
-40 °C
Thermal Resistance, Junction To Ambient
200 °C⁄W
Voltage, Drop, On-state, Maximum
1.7 V
Voltage, Forward
1.7 V
Voltage, Gate, Maximum
0.8 V (Trigger)
Voltage, Reverse
100 V
Voltage, Reverse, Peak, Maximum
100 V
Description:
The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional
gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with
rated voltages up to 600 volts.
These devices feature 200 microamp gate sensitivity, 5 millamp holding current and 8 amp surge ca-
pabilities.
Available in a TO–92 plastic package, these devices feature excellent environmental stress and tem-
perature cycling characteristics and, coupled with their small size and electrical performance, lend
themselves to various types of control functions encountered with sensors, motors, lamps, relays,
counters, triggers, etc.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (T
Repetitive Peak Off–State Voltage (T
RMS On–State Current, I
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), I
Peak Gate–Trigger Current (3 s Max), I
Peak Gate–Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Junction–to–Ambient, R
NTE5400
NTE5401
NTE5402
NTE5403
NTE5404
NTE5405
NTE5406
NTE5400
NTE5401
NTE5402
NTE5403
NTE5404
NTE5405
NTE5406
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
T(RMS)
stg
GT
0.8 Amp Sensitive Gate
NTE5400 thru NTE5406
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
C
C
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GTM
= +100 C), V
= +100 C), V
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
for 3 s Max), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
RRM
DRXM
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . .
TSM
. . . . . . . . . . . .
–40 to +100 C
–40 to +150 C
+200 C/W
+5 C/W
200mW
500mA
100V
150V
200V
400V
600V
100V
150V
200V
400V
600V
0.8A
20W
30V
60V
30V
60V
8A

Related parts for NTE5402

NTE5402 Summary of contents

Page 1

... NTE5402 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Electrical Characteristics: Parameter Peak Off–State Current Maximum On–State Voltage DC Holding Current DC Gate–Trigger Current DC Gate–Trigger Voltage for Fusing Reference Critical Rate of Applied Forward Voltage .105 (2.67) Max .205 (5.2) Max Symbol Test Conditions I ...

Related keywords