SKM 400 GB125D

Manufacturer Part NumberSKM 400 GB125D
DescriptionIGBT, Ultra Fast; IGBT; 1200 V; 400 A @ degC; 20 V; 390 A @ 25 degC; -40
ManufacturerSindopower / Semikron
TypeUltrafast
SKM 400 GB125D datasheet
 


Specifications of SKM 400 GB125D

Capacitance, Gate22 nFCurrent, Collector400 A
Current, Forward390 A @ 25 °CEnergy Rating35 mJ
Inductance, Collector To Emitter20 nHInput Capacitance22 nF (Typ.)
Package TypeD56PolarityN-Channel
Primary TypeSiResistance, Thermal0.05 K⁄W (Max.)
Resistance, Thermal, Junction To Case0.05 K/WTemperature, Operating, Maximum+125 °C
Temperature, Operating, Minimum-40Time, Turn-off500 ns
Time, Turn-on70 nsTransistor TypeIGBT
Voltage, Collector To Emitter1200 VVoltage, Collector To Emitter Shorted1200 V
Voltage, Collector To Emitter, Saturation3.3 VVoltage, Gate To Emitter±20 V
Voltage, Gate To Emitter Threshold5.5 V (Typ.)Lead Free Status / Rohs StatusRoHS Compliant part Electrostatic Device
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SKM 400GB125D
®
SEMITRANS
3
Ultra Fast IGBT Modules
SKM 400GB125D
SKM 400GAL125D
SKM 400GAR125D
Features
Low inductance case
Short tail current with low
temperature dependence
High short circuit capability, self
limiting to 6 x I
cnom
Fast & soft inverse CAL diodes
Isolated copper baseplate using
DBC Direct Copper Bonding
Technology
Large clearance (13 mm) and
creepage distances (20 mm)
Typical Applications
Switched mode power supplies at
f
>20kHz
sw
Resonant inverters up to 100 kHz
Inductive heating
Electronic welders at f
> 20 kHz
sw
GB
GAL
GAR
Absolute Maximum Ratings
Symbol
Conditions
IGBT
V
T
= 25 °C
CES
j
I
T
= 150 °C
C
j
I
I
=2xI
CRM
CRM
Cnom
V
GES
t
V
= 600 V; V
≤ 20 V; V
psc
CC
GE
CES
Inverse Diode
I
T
= 150 °C
F
j
I
I
=2xI
FRM
FRM
Fnom
I
t
= 10 ms; sin.
FSM
p
Freewheeling Diode
I
T
= 150 °C
F
j
I
I
=2xI
FRM
FRM
Fnom
I
t
= 10 ms; sin.
FSM
p
Module
I
t(RMS)
T
vj
T
stg
V
AC, 1 min.
isol
Characteristics
Symbol
Conditions
IGBT
V
V
= V
, I
= 12 mA
GE(th)
GE
CE
C
I
V
= 0 V, V
= V
CES
GE
CE
CES
V
CE0
r
V
= 15 V
CE
GE
V
I
= 300 A, V
= 15 V
CE(sat)
Cnom
GE
C
ies
C
V
= 25, V
= 0 V
oes
CE
GE
C
res
Q
V
= 0V - +20V
G
GE
R
T
= °C
Gint
j
t
d(on)
t
R
= 2 Ω
r
Gon
E
on
t
R
= 2 Ω
d(off)
Goff
t
f
E
off
R
per IGBT
th(j-c)
Characteristics
Symbol
Conditions
Inverse Diode
V
= V
I
= 300 A; V
= 0 V
F
EC
Fnom
GE
T
= 25 °C, unless otherwise specified
c
Values
1200
T
= 25 °C
case
T
= 80 °C
case
± 20
< 1200 V
T
= 125 °C
j
T
= 25 °C
case
T
= 80 °C
case
T
= 150 °C
2880
j
T
= 25 °C
case
T
= 80 °C
case
T
= 150 °C
2880
j
- 40...+ 150
- 40...+ 125
4000
T
= 25 °C, unless otherwise specified
c
min.
typ.
4,5
5,5
T
= 25 °C
0,15
j
T
= 25 °C
1,4
j
T
= 125 °C
1,7
j
T
= 25°C
6,3
j
T
= 125°C
7,6
j
T
= 25°C
3,3
j
chiplev.
T
= 125°C
4
j
chiplev.
22
f = 1 MHz
3,3
1,2
2650
1,25
70
V
= 600V
50
CC
I
= 300A
17
C
T
= 125 °C
500
j
V
= ±15V
32
GE
18
min. typ.
T
= 25 °C
2
j
chiplev.
T
= 125 °C
1,8
j
chiplev.
Units
V
400
A
300
A
600
A
V
10
µs
390
A
260
A
600
A
A
390
A
260
A
600
A
A
500
A
°C
°C
V
max.
Units
6,5
V
0,45
mA
V
V
mΩ
mΩ
3,85
V
4,55
V
30
nF
4
nF
1,6
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0,05
K/W
max.
Units
2,5
V
V

SKM 400 GB125D Summary of contents

  • Page 1

    SKM 400GB125D ® SEMITRANS 3 Ultra Fast IGBT Modules SKM 400GB125D SKM 400GAL125D SKM 400GAR125D Features Low inductance case Short tail current with low temperature dependence High short circuit capability, self limiting cnom Fast & soft ...

  • Page 2

    300 A RRM F Q di/dt = 8300 A/µ 600 per diode th(j-c)D Freewheeling Diode ...

  • Page 3

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