SI1902DL-T1-E3 Siliconix / Vishay, SI1902DL-T1-E3 Datasheet

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SI1902DL-T1-E3

Manufacturer Part Number
SI1902DL-T1-E3
Description
MOSFET, Dual, N-Channel, 20V, 0.70A, SOT-363
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SI1902DL-T1-E3

Lead Free Status / Rohs Status
RoHS Compliant part

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Notes
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71080
S-51415–Rev. H, 03-Apr-06
ABSOLUTE MAXIMUM RATINGS T
PRODUCT SUMMARY
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
20
(V)
0.385 at V
0.630 at V
r
DS(on)
J
a
GS
GS
= 150 °C)
a
Dual N-Channel 20-V (D-S) MOSFET
(Ω)
= 4.5 V
= 2.5 V
Ordering Information: Si1902DL-T1 (with Tape and Reel)
G
D
S
1
1
2
a
1
2
3
SC-70 (6-LEADS)
SOT-363
a
Top View
Steady State
Steady State
I
D
0.70
0.54
A
t ≤ 5 sec
T
T
T
T
(A)
A
A
A
A
= 25 °C, unless otherwise noted
= 25 °C
= 85 °C
= 25 °C
= 85 °C
Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel)
6
5
4
D
G
S
1
2
2
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
I
I
thJA
thJF
DS
GS
FEATURES
D
S
D
• TrenchFET
stg
Marking Code
M a r k in g C o d e
P A X
PA
X X
Part # Code
Lot Traceability
and Date Code
L o t T
Typical
5 secs
®
0.70
0.50
0.25
0.30
0.16
360
400
300
Power MOSFETS: 2.5 V Rated
- 55 to 150
±12
1.0
20
Steady State
Maximum
0.66
0.48
0.23
0.27
0.14
415
460
350
Vishay Siliconix
Si1902DL
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS*
COMPLIANT
Available
Pb-free
1

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SI1902DL-T1-E3 Summary of contents

Page 1

... Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71080 S-51415–Rev. H, 03-Apr-06 FEATURES • TrenchFET I (A) D 0.70 0.54 SOT-363 SC-70 (6-LEADS Marking Code Part # Code Top View Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel °C, unless otherwise noted A Symbol ° ° ° ° ...

Page 2

... Si1902DL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V – Source-to-Drain Voltage (V) SD Surge-Drain Diode Forward Voltage Document Number: 71080 S-51415–Rev. H, 03-Apr- °C, unless otherwise noted 4 0.6 0.8 1.0 0.6 0 °C J 0.8 1.0 1.2 Si1902DL Vishay Siliconix 100 80 C iss oss 20 C rss – Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si1902DL Vishay Siliconix TYPICAL CHARACTERISTICS T 0.2 0 0.0 - 0.1 - 0.2 - 0 – Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com °C, unless otherwise noted A = 250 μ 100 125 150 ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71080. Document Number: 71080 S-51415–Rev. H, 03-Apr- °C, unless otherwise noted Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si1902DL Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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