- Components/
- Semiconductor Modules/
- Discrete Semiconductor Modules/
SI4488DY-T1-E3/BKN
SI4488DY-T1-E3/BKN | |
|---|---|
| Manufacturer Part Number | SI4488DY-T1-E3/BKN |
| Description | MOSFET; SOIC8 150V N-Channel Trench |
| Manufacturer | Siliconix / Vishay |
| SI4488DY-T1-E3/BKN datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
- We ship worldwide using main international couriers like FedEx, DHL, UPS, TNT, EMS. We can also use client's freight account. Other shipping methods can be discussed. We do best to meet your needs!
Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of SI4488DY-T1-E3/BKN | |||
|---|---|---|---|
| Channel Type | N | Current, Drain | 5.00 A |
| Fall Time | 15 ns | Gate Charge, Total | 36 nC |
| Operating And Storage Temperature | –55 to +150 °C | Package Type | SO-8 |
| Polarization | Dual N-Channel | Power Dissipation | 1.4 W |
| Resistance, Drain To Source On | 0.500 Ohm | Temperature, Operating, Maximum | +150 –55 to +150 |
| Temperature, Operating, Minimum | –55 °C | Thermal Resistance, Junction To Ambient | 40 °C/W |
| Time, Rise | 11 ns | Time, Turn-off Delay | 33 ns |
| Time, Turn-on Delay | 18 ns | Transconductance, Forward | 18 S |
| Voltage, Breakdown, Drain To Source | 150 V | Voltage, Drain To Source | 150 V |
| Voltage, Forward, Diode | 1 V | Voltage, Gate To Source | ±20 V |
| Lead Free Status / Rohs Status | RoHS Compliant part Electrostatic Device | ||
1
2
3
4
5
6
PrevNext
Si4488DY
Vishay Siliconix
SPECIFICATIONS T
= 25 °C, unless otherwise noted
J
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
a
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
V
= 10 V thru 7 V
GS
40
6 V
30
20
10
0
0
2
4
V
- Drain-to-Source Voltage (V)
DS
Output Characteristics
www.vishay.com
2
Symbol
Test Conditions
V
V
= V
, I
= 250 µA
GS(th)
DS
GS
D
I
V
= 0 V, V
= ± 20 V
GSS
DS
GS
V
= 120 V, V
= 0 V
DS
GS
I
DSS
V
= 120 V, V
= 0 V, T
DS
GS
J
≥ 5 V, V
I
V
= 10 V
D(on)
DS
GS
R
V
= 10 V, I
= 5 A
DS(on)
GS
D
g
V
= 15 V, I
= 5 A
fs
DS
D
V
I
= 2.8 A, V
= 0 V
SD
S
GS
Q
g
Q
V
= 75 V, V
= 10 V, I
gs
DS
GS
D
Q
gd
R
g
t
d(on)
= 15 Ω
t
V
= 75 V, R
r
DD
L
≅ 5 A, V
I
= 10 V, R
t
D
GEN
g
d(off)
t
f
t
I
= 2.8 A, dI/dt = 100 A/µs
rr
F
5 V
3, 4 V
6
8
10
Min.
Typ.
Max.
2.0
± 100
1
= 55 °C
5
50
0.041
0.050
18
0.75
1.1
30
36
= 5 A
8.5
8.5
0.2
0.85
1.2
12
18
7
11
= 6 Ω
22
33
10
15
40
70
50
40
30
20
T
= 125 °C
C
10
25 °C
0
0
1
2
3
4
5
V
- Gate-to-Source Voltage (V)
GS
Transfer Characteristics
Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
Unit
V
nA
µA
A
Ω
S
V
nC
Ω
ns
- 55 °C
6
7
Related parts for SI4488DY-T1-E3/BKN | |||
|---|---|---|---|
| Part Number | Description | Manufacturer | Datasheet |
 Si4488DY-T1 |
N-Channel 150-V (D-S) MOSFET | Vishay Siliconix |
|
 SI4488DY-T1-E3 |
MOSFET N-CH 150V 3.5A 8-SOIC | Vishay |
|
 si4488dy |
N-channel 150-v D-s Mosfet | Vishay |
|
|
SI4488DY-T1-GE3 |
MOSFET N-CH 150V 8-SOIC | Vishay |
|
|
SI4488DY_06 |
N-Channel 150-V (D-S) MOSFET | VISHAY [Vishay Siliconix] |
|
 4N33 |
Optoisolator; Analog; 6-Pin DIP; Darlington; P; 100 mW | Siliconix / Vishay |
|
|
4N35 |
Optoisolator; Analog; 6-Pin DIP; Transistor; 150 mW; 60 mA | Siliconix / Vishay |
|
|
4N32 |
Optoisolator; Analog; 6-Pin DIP; Darlington; N-Channel; 100 mW; 1.25 V | Siliconix / Vishay |
|
|
SI4848DY-T1-E3 |
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.068Ohm; ID 2.7A; SO-8; PD 1.5W; VGS +/-20V | Siliconix / Vishay |
|
|
SI2302ADS-T1-E3 |
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.045Ohm; ID 2.1A; TO-236 (SOT-23); PD 0.7W | Siliconix / Vishay |
|
|
CNY70 |
PHOTOINTERRUPTER REFLECTIVE PHOTOTRANSISTOR 4-PIN TUBE | Siliconix / Vishay | |
|
SI4412DY-T1-E3 |
MOSFET; N-Ch; VDSS 30V; RDS(ON) 0.028 Ohm; ID +/-7A; SO-8; PD 2.5W; VGS +/-20V; gFS 16S | Siliconix / Vishay |
|
|
SI4435BDY-T1-E3 |
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ohm; ID -7A; SO-8; PD 1.5W; VGS +/-20V; -55 | Siliconix / Vishay |
|
|
SI1902DL-T1-E3 |
MOSFET, Dual, N-Channel, 20V, 0.70A, SOT-363 | Siliconix / Vishay |
|
|
TCRT1000 |
PHOTOINTERRUPTER REFLECTIVE PHOTOTRANSISTOR 4-PIN BULK | Siliconix / Vishay | |
