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SI4488DY-T1-E3/BKN
SI4488DY-T1-E3/BKN | |
|---|---|
| Manufacturer Part Number | SI4488DY-T1-E3/BKN |
| Description | MOSFET; SOIC8 150V N-Channel Trench |
| Manufacturer | Siliconix / Vishay |
| SI4488DY-T1-E3/BKN datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
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Specifications of SI4488DY-T1-E3/BKN | |||
|---|---|---|---|
| Channel Type | N | Current, Drain | 5.00 A |
| Fall Time | 15 ns | Gate Charge, Total | 36 nC |
| Operating And Storage Temperature | –55 to +150 °C | Package Type | SO-8 |
| Polarization | Dual N-Channel | Power Dissipation | 1.4 W |
| Resistance, Drain To Source On | 0.500 Ohm | Temperature, Operating, Maximum | +150 –55 to +150 |
| Temperature, Operating, Minimum | –55 °C | Thermal Resistance, Junction To Ambient | 40 °C/W |
| Time, Rise | 11 ns | Time, Turn-off Delay | 33 ns |
| Time, Turn-on Delay | 18 ns | Transconductance, Forward | 18 S |
| Voltage, Breakdown, Drain To Source | 150 V | Voltage, Drain To Source | 150 V |
| Voltage, Forward, Diode | 1 V | Voltage, Gate To Source | ±20 V |
| Lead Free Status / Rohs Status | RoHS Compliant part Electrostatic Device | ||
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Si4488DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
0.5
I
0.0
- 0.5
- 1.0
- 1.5
- 50
- 25
0
25
50
T
- Temperature (°C)
J
Threshold Voltage
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
10
10
www.vishay.com
4
= 250 µA
D
75
100
125
150
60
50
40
30
20
10
0
0.01
0.1
1
Time (s)
Single Pulse Power
-2
-1
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
T = 25 °C
10
T = 125 °C
1
0.1
-5
-4
-3
-2
10
10
10
10
10
Time (s)
Avalanche Current vs. Time
10
100
Notes:
P
DM
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T
- T
= P
Z
JM
A
DM
thJA
4. Surface Mounted
1
10
100
Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
-1
1
600
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