SI4488DY-T1-E3/BKN

Manufacturer Part NumberSI4488DY-T1-E3/BKN
DescriptionMOSFET; SOIC8 150V N-Channel Trench
ManufacturerSiliconix / Vishay
SI4488DY-T1-E3/BKN datasheets

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Specifications of SI4488DY-T1-E3/BKN

Channel TypeNCurrent, Drain5.00 A
Fall Time15 nsGate Charge, Total36 nC
Operating And Storage Temperature–55 to +150 °CPackage TypeSO-8
PolarizationDual N-ChannelPower Dissipation1.4 W
Resistance, Drain To Source On0.500 OhmTemperature, Operating, Maximum+150 –55 to +150
Temperature, Operating, Minimum–55 °CThermal Resistance, Junction To Ambient40 °C/W
Time, Rise11 nsTime, Turn-off Delay33 ns
Time, Turn-on Delay18 nsTransconductance, Forward18 S
Voltage, Breakdown, Drain To Source150 VVoltage, Drain To Source150 V
Voltage, Forward, Diode1 VVoltage, Gate To Source±20 V
Lead Free Status / Rohs StatusRoHS Compliant part Electrostatic Device  
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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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