NTE27C64-15D NTE Electronics, Inc., NTE27C64-15D Datasheet

NTE27C64-15D

Manufacturer Part Number

NTE27C64-15D

Description

EPROM; 64 Kbit UV; 100 ns; 12.5 + 0.25 V; -2 to V; 30 mA (Max.); 6 pF (Max.)

Manufacturer

NTE Electronics, Inc.

Datasheet

1.NTE27C64-15D.pdf (6 pages)

Specifications of NTE27C64-15D

Capacitance, Input

6 pF

Capacitance, Output

12 pF

Current, Input, Leakage

±10 μA

Current, Operating

30 mA

Current, Output, Leakage

±10

Current, Supply

30 mA (Max.)

Density

64K

Interface

Bus

Memory Type

UV EPROM

Organization

8K×8

Package Type

DIP

Temperature, Operating

-40 to +125 °C

Temperature, Operating, Maximum

125 °C

Temperature, Operating, Minimum

-40 °C

Time, Access

100 ns

Voltage, Input, High

6 V (Read), 6.5 V (Programming)

Voltage, Input, High Level

2 V (Min.)

Voltage, Input, Low

0.8 V

Voltage, Input, Low Level

0.8 V (Max.)

Voltage, Output, High

2.4 V (TTL), 4.3 V CMOS (Read)

Voltage, Output, Low

0.4 V

Voltage, Programmable

12.5 ± 0.25 V

Voltage, Supply

-2 to +7 V

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Description:

The NTE27C64−15D is a 64Kbit UV EPROM in a 28−Lead DIP type package ideally suited for micro-

processor systems requiring large programs and is organized as 8,192 by 8 bits. This device has a

transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A

new pattern can then be written to the device by following the programming procedure.

Features:

D 5V 10% Supply Voltage in Read Operation

D Access Time: 100ns

D Low Power “CMOS” Consumption:

D Programming Voltage: 12.5V 0.25V

Absolute Maximum Ratings: (Note 1)

Supply Voltage, V

Input or Output Voltage (Except A9, Note 2), V

A9 Voltage (Note 2), V

Program Supply Voltage, V

Ambient Operating Temperature Range, T

Temperature Under Bias Range, T

Storage Temperature Range, T

Note 1. Except for the rating “Operating Temperature Range”, stresses above those listed in the

Note 2. Minimum DC voltage on the input or output is −0.5V with possible undershoot to −2.0V for

− Active Current 30mA

− Standby Current 100 A

table “Absolute Maximum Ratings” may cause permanent damage to the device. These are

stress ratings only and operation of the device at these or any other conditions above those

indicated in the Operating sections of this specification is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may affect device reliability.

a period less than 20ns. Maximum DC voltage on output is V

shoot to V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+2V for a period less than 20ns.

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64 Kbit (8Kb x 8) UV EPROM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

STG

BIAS

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Integrated Circuit

NTE27C64−15D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+0.5V with possible over-

−40 to +125 C

−50 to +125 C

−65 to +150 C

−2 to +13.5V

−2 to +14V

−2 to +7V

Related parts for NTE27C64-15D

NTE27C64-15D Summary of contents

Page 1

... Description: The NTE27C64−15D is a 64Kbit UV EPROM in a 28−Lead DIP type package ideally suited for micro- processor systems requiring large programs and is organized as 8,192 by 8 bits. This device has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure ...

Page 2

... Standby Mode: The NTE27C64has a standby mode which reduces the active current from 30mA to 100 A. The NTE27C64 is placed in the standby mode by applying a CMOS high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the G input. Two Line Output Control: Because EPROMs are usually used in larger memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection ...

Page 3

Read Mode DC Characteristics: (T Parameter Input Leakage Current Output Leakage Current Supply Current Supply Surrent (Standby) TTL CMOS Program Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage TTL CMOS Note 4. V must be ...

Page 4

... Data is introduced by selectively programming “0”s into the desired bit locations. Although only “0”s will be programmed, both “1”s and “0”s can be present in the data word. The only way to change a “0” “1” die exposure to ultraviolet light (UV EPROM). The NTE27C64 is in the programming mode when V ...

Page 5

... Program Inhibit: Programming of multiple NTE27C64s in parallel with different data is also easily accomplished. Ex- cept for E, all like inputs including G of the parallel NTE27C64 may be common. A TTL low level pulse applied to an NTE27C64’s P input, with E low and V level E input inhibits the other NTE27C64s from being programmed. ...

Page 6

Max 28 1 .100 (2.54) 15 .526 (13.36) Max 14 .225 (5.72) Max .125 (3.18) Min ...

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