IRFIB7N50APBF Vishay PCS, IRFIB7N50APBF Datasheet
IRFIB7N50APBF
Manufacturer Part Number
IRFIB7N50APBF
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.52Ohm; ID 6.6A; TO-220 Full-Pak; PD 60W
Manufacturer
Vishay PCS
Datasheet
1.IRFIB7N50APBF.pdf
(3 pages)
Specifications of IRFIB7N50APBF
Current, Drain
6.6 A
Gate Charge, Total
52 nC
Package Type
TO-220 Full-Pak
Polarization
N-Channel
Power Dissipation
60 W
Resistance, Drain To Source On
0.52 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
32 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
6.1 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
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Benefits
Applicable Off Line SMPS Topologies:
Applications
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
T
D
D
DM
J
STG
D
GS
@ T
@ T
dv/dt Ruggedness
Avalanche Voltage and Current
Drive Requirement
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
High Voltage Isolation = 2.5KVRMS
Lead-Free
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and dynamic
Fully Characterized Capacitance and
Effective Coss specified ( See AN 1001)
@T
Two Transistor Forward
Half & Full Bridge Convertors
Power Factor Correction Boost
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
500V
IRFIB7N50APbF
DSS
300 (1.6mm from case )
TO-220 FULLP AK
HEXFET
10 lbf•in (1.1N•m)
-55 to + 150
Rds(on) max
Max.
0.48
± 30
6.6
4.2
6.9
44
60
0.52Ω
®
Power MOSFET
G
D
PD - 94805
S
Units
6.6A
W/°C
V/ns
°C
I
W
A
V
D
1
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IRFIB7N50APBF Summary of contents
Page 1
... J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torqe, 6- screw Applicable Off Line SMPS Topologies: Two Transistor Forward Half & Full Bridge Convertors Power Factor Correction Boost SMPS MOSFET IRFIB7N50APbF HEXFET V Rds(on) max DSS 500V TO-220 FULLP AK @ 10V GS @ 10V GS - 150 300 (1 ...
Page 2
... IRFIB7N50APbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...
Page 3
... IRFIB7N50APbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information EXAM PLE IRFI84 0G W ITH A SSEM ASSEM BLED 1999 ASSEM BLY LIN E "K" Note: "P" in assembly line position indicates "Lead-Free" Notes: Repetitive rating; pulse width limited by max ...