NTE398 NTE Electronics, Inc., NTE398 Datasheet
NTE398
Manufacturer Part Number
NTE398
Description
Transistor; PNP; Silicon; 200 V; 150 V; 5 V; 2 A; 25 W; 150 degC; NPN
Manufacturer
NTE Electronics, Inc.
Type
VHF/UHFr
Datasheet
1.NTE398.pdf
(2 pages)
Specifications of NTE398
Complement To
NPN
Current, Collector
2 A
Current, Collector Cutoff
20 μA @ VCB == 90V, IE == 0
Current, Continuous Collector
2 A
Current, Gain
120
Frequency
5 MHz
Material Type
Silicon
Package Type
TO-220
Polarity
PNP
Power Dissipation
25 W
Primary Type
Si
Temperature Range, Junction, Operating
150 °C
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Emitter
150 V
Voltage, Collector To Base
200 V
Voltage, Collector To Emitter
150 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
1.5 V (Max.) @ IC == 3A, IB == 0.3A
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Note 1. Pulse Width
Electrical Characteristics: (T
Note 2. Pulse Width
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector–Emitter Saturation Voltage V
Continuous
Pulsed (Note 1)
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
10ms, Duty Cycle
350 s, Duty Cycle
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
= +25 C), P
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon PNP Transistor
A
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25 C unless otherwise specified)
(Compl to NTE375)
TV Vertical Output
I
I
CE(sat)
h
CBO
EBO
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
FE
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
I
NTE398
50%.
C
25%/Pulsed.
CB
EB
CE
CE
= 500A, I
= 4V, I
= 150V, I
= 10V, I
= 10V, I
Test Conditions
C
B
C
C
= 0
E
= 50mA
= 400mA, Note 2
= 400mA, Note 2
= 0
Min
60
–
–
–
–
Typ
–
–
–
5
–
–55 to +150 C
Max Unit
120
1.0
50
50
–
+150 C
MHz
200V
150V
25W
V
A
A
5V
2A
3A
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NTE398 Summary of contents
Page 1
... Electrical Characteristics: (T Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector–Emitter Saturation Voltage V Note 2. Pulse Width 350 s, Duty Cycle NTE398 Silicon PNP Transistor TV Vertical Output (Compl to NTE375) = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Dia Max .070 (1.78) Max Base .100 (2.54) .420 (10.67) Max .250 (6.35) Max Emitter Collector/Tab .110 (2.79) .500 (12.7) Max .500 (12.7) Min ...