IRFD9014PBF Vishay PCS, IRFD9014PBF Datasheet

IRFD9014PBF
Manufacturer Part Number	IRFD9014PBF
Description	MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.5Ohm; ID -1.1A; HD-1; PD 1.3W; VGS +/-20V; -55
Manufacturer	Vishay PCS
IRFD9014PBF datasheets	1. IRFD9014PBF.pdf (8 pages)

Request lead time and price

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Specifications of IRFD9014PBF
Current, Drain	-1.1 A	Gate Charge, Total	12 nC
Package Type	HD-1	Polarization	P-Channel
Power Dissipation	1.3 W	Resistance, Drain To Source On	0.5 Ohm
Temperature, Operating, Maximum	+175 °C	Temperature, Operating, Minimum	-55 °C
Time, Turn-off Delay	10 ns	Time, Turn-on Delay	11 ns
Transconductance, Forward	0.7 S	Voltage, Breakdown, Drain To Source	-60 V
Voltage, Forward, Diode	-5.5 V	Voltage, Gate To Source	±20 V
Lead Free Status / Rohs Status	RoHS Compliant part

Page 1/8

Download datasheet (2Mb)Embed

Prev Next

PRODUCT SUMMARY

(V)

(Ω)

= 10 V

DS(on)

(Max.) (nC)

(nC)

Configuration

HVMDIP

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 52 mH, R

≤ 10 A, dI/dt ≤ 90 A/µs, V

≤ V

c. I

, T

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91125

S09-1829-Rev. B, 21-Sep-09

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

• For Automatic Insertion

0.20

• End Stackable

• 175 °C Operating Temperature

3.1

• Fast Switching

5.8

Single

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case

style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

N-Channel MOSFET

link to the mounting surface for power dissipation levels up to

1 W.

HVMDIP

IRFD014PbF

SiHFD014-E3

IRFD014

SiHFD014

= 25 °C, unless otherwise noted

= 25 °C

at 10 V

= 100 °C

= 25 °C

for 10 s

= 25 Ω, I

= 1.7 A (see fig. 12).

≤ 175 °C.

IRFD014, SiHFD014

Vishay Siliconix

device

design,

low

on-resistance

SYMBOL

LIMIT

± 20

1.7

1.2

0.0083

130

1.3

dV/dt

4.5

, T

- 55 to + 175

stg

300

www.vishay.com

Available

RoHS*

COMPLIANT

and

UNIT

W/°C

V/ns

°C

Download datasheet (2Mb)

Related parts for IRFD9014PBF
Part Number	Description	Manufacturer	Datasheet
IRFD9010PBF	MOSFET, Power; P-Ch; 60V 1.100A HEXDIP	Vishay PCS	IRFD9010PBF.pdf (7 pages)
IRFD9024PBF	MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.28Ohm; ID -1.6A; HD-1; PD 1.3W; VGS +/-20V	Vishay PCS	IRFD9024PBF.pdf (3 pages)
IRFD110PBF	MOSFET N-CH 100V 1A 4-DIP	Vishay	IRFD110PBF.pdf (9 pages)
IRFD9220PBF	MOSFET P-CH 200V 560MA 4-DIP	Vishay	IRFD9220PBF.pdf (9 pages)
IRFD9020	MOSFET P-CH 60V 1.6A 4-DIP	Vishay	IRFD9020.pdf (8 pages)
IRFD9110PBF	MOSFET P-CH 100V 700MA 4-DIP	Vishay	IRFD9110PBF.pdf (9 pages)
IRFD9210PBF	MOSFET P-CH 200V 400MA 4-DIP	Vishay	IRFD9210PBF.pdf (9 pages)
IRFD9113	MOSFET P-CH 60V 600MA 4-DIP	Vishay	IRFD9113.pdf (6 pages)
IRFD110	MOSFET N-CH 100V 1A 4-DIP	Vishay	IRFD110.pdf (9 pages)
IRFD210	MOSFET N-CH 200V 600MA 4-DIP	Vishay	IRFD210.pdf (6 pages)
IRFD120	MOSFET N-CH 100V 1.3A 4-DIP	Vishay	IRFD120.pdf (9 pages)
IRFD014	MOSFET N-CH 60V 1.7A 4-DIP	Vishay	IRFD014.pdf (8 pages)
IRFD9014	MOSFET P-CH 60V 1.1A 4-DIP	Vishay	IRFD9014PBF.pdf (8 pages)
IRFD220	MOSFET N-CH 200V 800MA 4-DIP	Vishay
IRFD9110	MOSFET P-CH 100V 700MA 4-DIP	Vishay

IRFD9014PBF Summary of contents
Page 1 PRODUCT SUMMARY V ( (Ω DS(on (Max.) (nC (nC (nC) gd Configuration HVMDIP ORDERING INFORMATION Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS T PARAMETER ... Page 2 IRFD014, SiHFD014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State ... Page 3 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91125 S09-1829-Rev. B, 21-Sep- °C Fig Typical Transfer Characteristics C Fig ... Page 4 IRFD014, SiHFD014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: ... Page 5 Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required I AS D.U 0. ... Page 6 IRFD014, SiHFD014 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 ... Page 7 D.U Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data ... Page 8 All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

IRFD9014PBF Summary of contents

Page 1
PRODUCT SUMMARY V ( (Ω DS(on (Max.) (nC (nC (nC) gd Configuration HVMDIP ORDERING INFORMATION Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS T PARAMETER ...
Page 2
IRFD014, SiHFD014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State ...
Page 3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91125 S09-1829-Rev. B, 21-Sep- °C Fig Typical Transfer Characteristics C Fig ...
Page 4
IRFD014, SiHFD014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: ...
Page 5
Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required I AS D.U 0. ...
Page 6
IRFD014, SiHFD014 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 ...
Page 7
D.U Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data ...
Page 8
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

IRFD9014PBF

IRFD9014PBF

Shipping terms

Payment terms

Specifications of IRFD9014PBF

Related parts for IRFD9014PBF

IRFD9014PBF Summary of contents

Related keywords: