SK 10GD123 Sindopower / Semikron, SK 10GD123 Datasheet
SK 10GD123
Manufacturer Part Number
SK 10GD123
Description
DUAL ANTIPARALLEL THYRISTOR MODULE, 1600V, SEMITOP3
Manufacturer
Sindopower / Semikron
Type
NPTr
Datasheet
1.SK_10GD123.pdf
(2 pages)
Specifications of SK 10GD123
Capacitance, Gate
0.53 nF
Current, Collector
16 A
Energy Rating
2.3 mJ
Package Type
T12
Polarity
N-Channel
Primary Type
Si
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
2.7 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
SK 10 GD 123
IGBT Module
SK 10 GD 123
Preliminary Data
Features
Typical Applications
1
SEMITOP
®
GD
3
Absolute Maximum Ratings
Symbol
IGBT
Inverse/Freewheeling CAL diode
Characteristics
Symbol
IGBT
Inverse/Freewheeling CAL diode
Mechanical data
19-10-2005 RAM
Conditions
Conditions
min.
Values
typ.
© by SEMIKRON
max.
Units
Units
Related parts for SK 10GD123
SK 10GD123 Summary of contents
Page 1
123 ® SEMITOP 3 IGBT Module 123 Preliminary Data Features Typical Applications GD 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse/Freewheeling CAL diode Characteristics Symbol Conditions IGBT Inverse/Freewheeling CAL diode Mechanical data 19-10-2005 RAM ...
Page 2
123 UL Recognized File no. E 63532 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or ...