SKM 200GB12E4

Manufacturer Part NumberSKM 200GB12E4
DescriptionIGBT; D-56; IGBT; 1200 V; 310 A; 1200 V; 20 V; 5.5 V (Typ.)
ManufacturerSindopower / Semikron
TypeSPT
SKM 200GB12E4 datasheet
 


Specifications of SKM 200GB12E4

Capacitance, Gate13 nFCurrent, Collector300 A
Energy Rating33 mJFall Time55 ns
Operating And Storage Temperature-40 to 150°C (Operating), -40 to 125°C (Storage)Package TypeD56
PolarityN-ChannelPrimary TypeSi
Resistance, Thermal, Junction To Case0.095 K/WSwitching Loss18 mJ
Time, Rise50 nsTransistor TypeIGBT
Voltage, Breakdown, Collector To Emitter1200 VVoltage, Collector To Emitter Shorted1200 V
Voltage, Collector To Emitter, Saturation1.9 VVoltage, Gate Threshold, Range5.5 V
Voltage, Gate To Source±20 VVoltage, Saturation, Collector To Emitter1200 V
Lead Free Status / Rohs StatusRoHS Compliant part  
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SKM 200GB128D
®
SEMITRANS
3
SPT IGBT Module
SKM 200GB128D
Features
Typical Applications
GB
1
Absolute Maximum Ratings
Symbol
Conditions
IGBT
Inverse Diode
Module
Characteristics
Symbol
Conditions
IGBT
11-09-2006 SEN
Values
Units
min.
typ.
max.
Units
© by SEMIKRON

SKM 200GB12E4 Summary of contents

  • Page 1

    SKM 200GB128D ® SEMITRANS 3 SPT IGBT Module SKM 200GB128D Features Typical Applications GB 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Module Characteristics Symbol Conditions IGBT 11-09-2006 SEN Values Units min. typ. max. Units © by SEMIKRON ...

  • Page 2

    SKM 200GB128D ® SEMITRANS 3 SPT IGBT Module SKM 200GB128D Features Typical Applications GB 2 Characteristics Symbol Conditions Inverse Diode Module This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor ...

  • Page 3

    SKM 200GB128D ® SEMITRANS 3 SPT IGBT Module SKM 200GB128D Features Typical Applications Symbol Conditions Z th(j-c)l Z th(j-c)D 11-09-2006 SEN Values Units © by SEMIKRON ...

  • Page 4

    SKM 200GB128D UL Recognized 6 11-09-2006 SEN File no. 63 532 © by SEMIKRON ...