SKM 200GB12E4 Sindopower / Semikron, SKM 200GB12E4 Datasheet - Page 4

• Manufacturer Part Number: SKM 200GB12E4
• Description: IGBT; D-56; IGBT; 1200 V; 310 A; 1200 V; 20 V; 5.5 V (Typ.)
• Manufacturer: Sindopower / Semikron
• Type: SPTr

Specifications of SKM 200GB12E4

• Capacitance, Gate: 13 nF
• Current, Collector: 300 A
• Energy Rating: 33 mJ
• Fall Time: 55 ns
• Operating And Storage Temperature: -40 to 150°C (Operating), -40 to 125°C (Storage)
• Package Type: D56
• Polarity: N-Channel
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.095 K/W
• Switching Loss: 18 mJ
• Time, Rise: 50 ns
• Transistor Type: IGBT
• Voltage, Breakdown, Collector To Emitter: 1200 V
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 1.9 V
• Voltage, Gate Threshold, Range: 5.5 V
• Voltage, Gate To Source: ±20 V
• Voltage, Saturation, Collector To Emitter: 1200 V
• Lead Free Status / Rohs Status: RoHS Compliant part

SKM 200GB128D
UL Recognized
File no. 63 532
6
11-09-2006 SEN
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