IRFR120N International Rectifier, IRFR120N Datasheet - Page 2

• Manufacturer Part Number: IRFR120N
• Description: MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.21Ohm; ID 9.4A; D-Pak (TO-252AA); PD 48W
• Manufacturer: International Rectifier

Specifications of IRFR120N

• Application: Fast switching speed and ruggedized device design that for provides the designer with an extremely efficient device
• Channel Type: N-Channel
• Current, Drain: 9.4 A
• Fall Time: 23 ns (Typ.)
• Gate Charge, Total: 25 nC
• Mounting And Package Type: Surface Mount and TO-252AA
• Operating And Storage Temperature: -55 to +175 °C
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 48 W
• Resistance, Drain To Source On: 0.21 Ohm
• Resistance, Thermal, Junction To Case: 3.1 °C⁄W (Max.)
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 110 °C⁄W
• Time, Rise: 23 ns (Typ.)
• Time, Turn-off Delay: 32 ns
• Time, Turn-on Delay: 4.5 ns
• Transconductance, Forward: 2.7 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Diode Forward: 1.3 V (Max.)
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V

Electrical Characteristics @ T
IRFR/U120N
Source-Drain Ratings and Characteristics
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
L
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
I
I
V
t
Q
t
GSS
d(on)
r
d(off)
f
D
SM
S
rr
on
V
fs
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
g
gs
gd
SD
2
V
rr
Repetitive rating; pulse width limited by
(BR)DSS
R
I
max. junction temperature. ( See fig. 11 )
T
SD
DD
For recommended footprint and soldering techniques refer to application note #AN-994
G
J
= 25 , I
= 25V, starting T
175°C
5.7A, di/dt
/ T
J
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 5.7A. (See Figure 12)
240A/µs, V
J
= 25°C, L = 4.7mH
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Pulse width
Uses IRF520N data and test conditions
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
2.7
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
Typ. Max. Units
0.12 –––
–––
––– 0.21
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
330
4.5
7.5
4.5
–––
–––
–––
390
23
32
23
92
54
99
300µs; duty cycle
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
4.0
4.8
150
580
–––
25
25
11
1.3
9.4
38
V/°C Reference to 25°C, I
µA
nA
nC
nH
pF
ns
nC
V
V
S
ns
A
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
MOSFET symbol
integral reverse
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
J
J
2%
= 5.7A
= 5.7A
= 25°C, I
= 25°C, I
= 22
= 8.6
= V
= 25V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 50V
= 0V
GS
Conditions
, I
D
See Fig. 10
D
S
F
D
D
= 250µA
Conditions
GS
= 5.7A
= 5.5A, V
= 250µA
= 5.7A
= 5.6A
GS
= 0V, T
= 0V
D
= 1mA
GS
J
= 150°C
G
= 0V
G
S
+L
D
D
S
)
S
D