IRFR3711ZCPBF International Rectifier, IRFR3711ZCPBF Datasheet

IRFR3711ZCPBF

Manufacturer Part Number

IRFR3711ZCPBF

Description

MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 4.5 Milliohms; ID 93A; D-Pak (TO-252AA); PD 79W

Manufacturer

International Rectifier

Datasheet

1.IRFR3711ZCPBF.pdf (3 pages)

Specifications of IRFR3711ZCPBF

Channel Type

Current, Drain

93 A

Gate Charge, Total

18 nC

Package Type

D-Pak (TO-252AA)

Polarization

N-Channel

Power Dissipation

2.5 W

Resistance, Drain To Source On

0.0065 Ohm

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

15 ns

Time, Turn-on Delay

12 ns

Transconductance, Forward

48 S

Voltage, Breakdown, Drain To Source

20 V

Voltage, Forward, Diode

1 V

Voltage, Gate To Source

±20 V

Lead Free Status / Rohs Status

RoHS Compliant part

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFR3711ZCPBF

Manufacturer:

INTERNATIONAL RECTIFIER

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFR3711ZCPBF

Manufacturer:

Quantity:

12 500

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Download datasheet (141Kb)

Applications

Benefits

Notes through

Absolute Maximum Ratings

Thermal Resistance

STG

θJC

θJA

@ T

and Current

Converters with Synchronous Rectification

High Frequency Synchronous Buck

High Frequency Isolated DC-DC

for Telecom and Industrial Use

Lead-Free

Very Low RDS(on) at 4.5V V

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

Converters for Computer Processor Power

= 25°C

= 100°C

= 25°C

= 100°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

…

are on page 11

Parameter

@ 10V

gÃ

20V

DSS

Typ.

300 (1.6mm from case)

–––

-55 to + 175

HEXFET Power MOSFET

IRFR3711ZCPbF

IRFU3711ZCPbF

Max.

DS(on)

0.53

± 20

370

5.7m

D-Pak

Max.

110

1.9

max

IRFU3711ZCPbF

18nC

I-Pak

Units

W/°C

°C/W

°C

Related parts for IRFR3711ZCPBF

IRFR3711ZCPBF Summary of contents

Page 1

... GS @ 10V 300 (1.6mm from case) Typ. ––– gÃ ––– ––– IRFR3711ZCPbF IRFU3711ZCPbF HEXFET Power MOSFET R max Qg DS(on) 5.7m 18nC D-Pak I-Pak IRFR3711ZCPbF IRFU3711ZCPbF Max. Units 20 V ± 370 0.53 W/°C - 175 °C Max. Units 1.9 50 ° ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

5 ,5)5 $ ,5)5 9 ...

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