NTE395 NTE Electronics, Inc., NTE395 Datasheet

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NTE395

Manufacturer Part Number
NTE395
Description
Transistor; PNP; Silicon; TO-92; 30 V; 25 V; 3 V; 50 mA; 225 mW; 200 degC; NPN
Manufacturer
NTE Electronics, Inc.
Type
Amplifierr
Datasheet

Specifications of NTE395

Complement To
NPN
Current, Collector
50 mA
Current, Collector Cutoff
20 μA @ VCB == 90V, IE == 0
Current, Continuous Collector
50 mA
Current, Gain
40 – 200 @ VCE == 5V, IC == 0.5A
Frequency
2.3 GHz
Material Type
Silicon
Package Type
TO-72
Polarity
PNP
Power Dissipation
225 mW
Primary Type
Si
Resistance, Thermal, Junction To Case
485 °C/W
Temperature Range, Junction, Operating
200 °C
Thermal Resistance, Junction To Ambient
775 °C⁄W
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Emitter
25 V
Voltage, Collector To Base
30 V
Voltage, Collector To Emitter
25 V
Voltage, Emitter To Base
3 V
Voltage, Saturation, Collector To Emitter
1.5 V (Max.) @ IC == 3A, IB == 0.3A
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Power Dissipation (T
Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Note 1. Pulsed.
Note 2. V
Collector–Base Cutoff Current
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Static Forward Current Transfer Ratio
Base–Emitter Voltage
Knee Voltage
Transition Frequency
Maximum Oscillation Frequency
Output Capacitance
CEK
Parameter
tested with I
C
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
EBO
CBO
C
CEO
= 100ma and I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Wide Band Linear Amplifier
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon PNP Transistor
tot
tot
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
V
I
h
C
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
CEK
21E
f
22b
BE
T
f
thJC
B
NTE395
V
I
I
I
V
V
I
V
V
V
C
C
E
C
= values for which I
CB
CE
CE
CE
CE
CB
thJA
= 10 A, I
= 100 A, I
= 5mA, I
= 20mA, Note 2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 15V, I
= 10V, I
= 10V, I
= 15V, I
= 15V, I
= 15V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
B
C
E
C
C
C
C
E
= 0
E
= 0
= 0
= 10mA, Note 1
= 10mA
= 10mA
= 10mA
= 0, f = 1MHz
= 0
C
= 110mA at V
Min
1.4
30
25
20
3
CE
0.75
Typ
0.8
2.3
6.5
1.1
–55 to +200 C
= 1V.
Max
50
485 C/W
775 C/W
225mW
360mW
+200 C
50mA
GHz
GHz
Unit
nA
pF
V
V
V
V
V
30V
25V
3V

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NTE395 Summary of contents

Page 1

... Note 2. V tested with I CEK C NTE395 Silicon PNP Transistor Wide Band Linear Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter Power Gain Wide Band Power Gain Noise Figure = +25 C unless otherwise specified) A Symbol Test Conditions V = 15V 10mA 800MHz 860MHz, ...

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