SKM 400GB12E4 Sindopower / Semikron, SKM 400GB12E4 Datasheet - Page 2

• Manufacturer Part Number: SKM 400GB12E4
• Description: IGBT; D-56; IGBT; 565 A (Typ.); 1200 V; 0.16 K/W
• Manufacturer: Sindopower / Semikron
• Type: SPTr

Specifications of SKM 400GB12E4

• Capacitance, Gate: 26 nF
• Current, Collector: 565 A
• Energy Rating: 63 mJ
• Fall Time: 60 ns
• Operating And Storage Temperature: -40 to 150°C (Operating), -40 to 125°C (Storage)
• Package Type: D56
• Polarity: N-Channel
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.055 K/W
• Switching Loss: 32 mJ
• Time, Rise: 60 ns
• Transistor Type: IGBT
• Voltage, Breakdown, Collector To Emitter: 1200 V
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 1.9 V
• Voltage, Gate Threshold, Range: 5.5 V
• Voltage, Gate To Source: ±20 V
• Voltage, Saturation, Collector To Emitter: 1200 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SKM 400GB128D...
SPT IGBT Module
SKM 400GB128D
SKM 400GAL128D
SKM 400GAR128D
Features
Typical Applications
2
SEMITRANS
GB
GAL
®
3
GAR
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Characteristics
Symbol
Inverse Diode
FWD
Module
11-09-2006 SEN
Conditions
min.
typ.
© by SEMIKRON
max.
Units