SKM 400GB12E4 Sindopower / Semikron, SKM 400GB12E4 Datasheet - Page 3

• Manufacturer Part Number: SKM 400GB12E4
• Description: IGBT; D-56; IGBT; 565 A (Typ.); 1200 V; 0.16 K/W
• Manufacturer: Sindopower / Semikron
• Type: SPTr

Specifications of SKM 400GB12E4

• Capacitance, Gate: 26 nF
• Current, Collector: 565 A
• Energy Rating: 63 mJ
• Fall Time: 60 ns
• Operating And Storage Temperature: -40 to 150°C (Operating), -40 to 125°C (Storage)
• Package Type: D56
• Polarity: N-Channel
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.055 K/W
• Switching Loss: 32 mJ
• Time, Rise: 60 ns
• Transistor Type: IGBT
• Voltage, Breakdown, Collector To Emitter: 1200 V
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 1.9 V
• Voltage, Gate Threshold, Range: 5.5 V
• Voltage, Gate To Source: ±20 V
• Voltage, Saturation, Collector To Emitter: 1200 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SKM 400GB128D...
SPT IGBT Module
SKM 400GB128D
SKM 400GAL128D
SKM 400GAR128D
Features
Typical Applications
3
SEMITRANS
GB
GAL
®
3
GAR
Z
Symbol
Z
Z
th
th(j-c)l
th(j-c)D
11-09-2006 SEN
Conditions
Values
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Units