NTE161 NTE Electronics, Inc., NTE161 Datasheet
NTE161
Manufacturer Part Number
NTE161
Description
Transistor; NPN; 30 V (Min.) @ 1 uA; 3 V (Min.) @ 10 uA; 50 mA; 45 V; 45 V; 3 V
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Oscillatorr
Datasheet
1.NTE161.pdf
(2 pages)
Specifications of NTE161
Capacitance, Input
2 pF
Current, Collector
50 mA
Current, Collector Cutoff
0.01 μA
Current, Gain
20
Frequency
600 MHz
Package Type
TO-72
Polarity
NPN
Power Dissipation
200 mW
Primary Type
Si
Temperature, Junction, Maximum
200 °C
Temperature, Junction, Minimum
-65 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Base
30 V
Voltage, Breakdown, Collector To Emitter
45 V
Voltage, Breakdown, Emitter To Base
3 V
Voltage, Collector To Base
45 V
Voltage, Collector To Emitter
45 V
Voltage, Collector To Emitter, Saturation
0.4 V
Voltage, Emitter To Base
3 V
Voltage, Saturation, Base To Emitter
1 V
Voltage, Saturation, Collector To Emitter
0.4 V
Lead Free Status / Rohs Status
RoHS Compliant part
Features:
D High Current Gain–Bandwidth Product: f
D Low Output Capacitance: C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
OFF Characteristics
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current
Derate Above 25 C
Derate Above 25 C
Parameter
EBO
CBO
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VHF–UHF Amplifier, Mixer/Osc
CES
= +25 C), P
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
ob
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
= 1.7pF (Max) @ V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
(BR)CBO
(BR)EBO
I
CBO
D
D
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE161
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
T
C
E
C
CB
CB
= 600MHz (Min) @ f = 100MHz
= 10 A, I
= 1.0 A, I
= 3mA, I
= 15V, I
= 15V, I
Test Conditions
CB
B
C
E
E
E
= 0
= 0
= 10V
= 0
= 0, T
= 0
A
= +150 C
Min Typ Max Unit
3.0
30
15
–
–
–65 to +200 C
–65 to +200 C
–
–
–
–
–
1.14mW/ C
1.71mW/ C
0.01
1.0
–
–
–
200mW
300mW
50mA
45V
45V
V
V
V
A
A
3V
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NTE161 Summary of contents
Page 1
... Operating Junction Temperature Range, T Storage Temperature Range, T Electrical Characteristics: (T Parameter OFF Characteristics Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector–Emitter Sustaining Voltage V Collector Cutoff Current NTE161 Silicon NPN Transistor VHF–UHF Amplifier, Mixer/Osc = 600MHz (Min 100MHz T = 1.7pF (Max CES ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Input Capacitance Noise Figure Functional Test Amplifier Power Gain Power Output Collector Efficiency Note ...