2SK3875-01

Manufacturer Part Number2SK3875-01
DescriptionMOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 0.79Ohm; ID 13A; TO-247; PD 355W; VGS +/-30V
ManufacturerFuji Semiconductor
2SK3875-01 datasheets

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

 

Specifications of 2SK3875-01

Channel TypeN-ChannelCurrent, Drain13 A
Gate Charge, Total46 nCPackage TypeTO-247
PolarizationN-ChannelPower Dissipation355 W
Resistance, Drain To Source On0.79 OhmTemperature, Operating, Maximum+150 °C
Time, Turn-off Delay60 nsTime, Turn-on Delay20 ns
Transconductance, Forward12 SVoltage, Breakdown, Drain To Source900 V
Voltage, Forward, Diode1.1 VVoltage, Gate To Source±30 V
Lead Free Status / Rohs StatusRoHS Compliant part Electrostatic Device  
Page 1/1

Download datasheet (802Kb)Embed