1N5618GP General Semiconductor / Vishay, 1N5618GP Datasheet - Page 3

• Manufacturer Part Number: 1N5618GP
• Description: Diode, Avalanche, 600V, DO-204AC
• Manufacturer: General Semiconductor / Vishay

Specifications of 1N5618GP

• Capacitance, Junction: 25 pF
• Current, Forward: 1 A
• Current, Reverse: 25 μA
• Current, Surge: 50 A
• Mounting Type: PCB Mount
• Package Type: DO-240AC (DO-15)
• Primary Type: Rectifier
• Speed, Switching: Standard
• Temperature, Junction, Maximum: +175 °C
• Temperature, Junction, Minimum: -65 °C
• Temperature, Operating: -65 to +175 °C
• Temperature, Soldering: 350 °C
• Thermal Resistance, Junction To Ambient: 45 °C⁄W (Typ.)
• Time, Recovery: 2 μs
• Transistor Type: Glass Passivated Junction Rectifier
• Voltage, Forward: 1.2 V
• Voltage, Reverse: 600 V

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
0.1
0.1
10
10
1
1
0.4
0
Figure 4. Typical Reverse Characteristics
0.6
T
Instantaneous Forward Voltage (V)
Rated Peak Reverse Voltage (%)
20
J
= 150 °C
0.8
40
T
1.0
J
= 25 °C
T
T
T
J
J
J
Pulse Width = 300 µs
1 % Duty Cycle
60
= 75 °C
= 125 °C
= 25 °C
1.2
80
1.4
100
1.6
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
0.140 (3.6)
0.104 (2.6)
DIA.
DIA.
100
10
1
1
1N5614GP thru 1N5622GP
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Reverse Voltage (V)
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
100
3