MC68HC711KS2MFN4 Freescale Semiconductor, MC68HC711KS2MFN4 Datasheet - Page 98

• Manufacturer Part Number: MC68HC711KS2MFN4
• Description: 32K EPROM - SLOW MODE
• Manufacturer: Freescale Semiconductor

Operating Modes and On-Chip Memory
4.8.2.1 EEPROM Programming
Technical Data
98
The procedures for both writing and erasing involve these five steps:
The following examples demonstrate programming a single EEPROM
byte, erasing the entire EEPROM, erasing a row (16 bytes), and erasing
a single byte.
On entry, accumulator A contains the data to be written and X points to
the address to be programmed.
1. Set the EELAT bit in PPROG. If erasing, also set the ERASE bit
2. Write data to the appropriate EEPROM address. If erasing, any
3. Set the EEPGM bit in PPROG, keeping EELAT set. If erasing,
4. Delay for 10 ms.
5. Clear the PPROG register to turn off the high voltage and
EEPROG
and the appropriate BYTE and ROW bits.
data will work. To erase a row, write to any location in the row. To
erase the entire EEPROM, write to any location in the array. This
step is done before applying the programming voltage because
setting the EEPGM bit inhibits writes to EEPROM addresses.
also set the ERASE bit and the appropriate BYTE and ROW bits.
reconfigure the EEPROM address and data buses for normal
operation.
Operating Modes and On-Chip Memory
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
#$02
$003B
$0,X
#$03
$002B
DLY10
$003B
Set EELAT bit to enable EEPROM
latches.
Store data to EPROM address
Set EPGM bit with ELAT=1
to enable EEPROM programming voltage
Delay 10 ms
Turn off programming voltage and set
to READ mode
M68HC11K Family
MOTOROLA