6ED003L06-F Infineon Technologies, 6ED003L06-F Datasheet - Page 11

• Manufacturer Part Number: 6ED003L06-F
• Description: MOSFET & Power Driver ICs Integrated 3 Phse IGBT Control
• Manufacturer: Infineon Technologies

Specifications of 6ED003L06-F

• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

3.4 Static Logic function Table
3.5 Static Parameters
V
1
Datasheet
CC
Not subject of production test, verified by characterisation
V
Symbol
V
<V
V
V
V
V
V
V
V
V
V
V
RCIN,HYS
I
I
RCIN,TH
VCC
I
= V
EN,TH+
V
CCUVH
LVS+
15V
15V
15V
15V
15V
EN,TH-
IT
V
CCUV+
BSUV+
BSUVH
LVS-
IT
CCUV-
V
BSUV-
LVS+
V
CCUV-
,
,
OH
OL
IH
IL
TH+
HYS
1
BS
1
= 15V unless otherwise specified. (T
V
V
going threshold
V
going threshold
V
hysteresis
High side leakage current betw. VS and
VSS
VSS
VSy (x=1,2,3 and y=1,2,3)
Logic "0" input voltage (LIN,HIN)
Logic "1" input voltage (LIN,HIN)
EN positive going threshold
EN negative going threshold
ITRIP positive going threshold
ITRIP input hysteresis
RCIN positive going threshold
RCIN input hysteresis
Output voltage (high level, V
Output voltage (low level, V
High side leakage current betw. VS and
High side leakage current between VSx and
O
CC
CC
CC
<V
)
VBS
15V
15V
15V
15V
and V
and V
and V
X
BSUV-
BS
BS
BS
< 3.3V ↓
supply undervoltage positive
supply undervoltage negative
supply undervoltage lockout
> 5.8V
> 5.8V
RCIN
X
X
X
Definition
> V
ITRIP
0V
0V
0V
0V
X
IT,TH+
O
-V
CC
COM
-V
A
O
or V
=25°C)
ENABLE
or V
5V
5V
5V
5V
0V
O
X
11
-V
BS
S
-
)
Min.
11.0
360
1.7
0.7
1.9
1.1
9.5
1.2
45
High imp
High imp
High imp
-
-
-
-
-
-
-
FAULT
Integrated 3 Phase Gate Driver
0
0
0
Typ.
10.4
460
2.1
0.9
2.1
1.3
6.0
2.5
0.8
0.2
1.6
70
12
30
30
1
/LIN1,2,3
/LIN1,2,3
LO1,2,3
Max.
12.8
11.0
540
2.4
1.1
2.3
1.5
7.5
1.4
0.6
5
-
-
-
-
0
0
0
0
Unit
mV
µA
µA
V
V
6ED003L06-F
/HIN1,2,3
HO1,2,3
Rev. 2, Dec 2008
Test Conditions
V
Sx
I
0
0
0
0
0
I
V
T
V
O
T
O
- V
j
S
S
=125°C,
j
= -20mA
=125°C
= 20mA
= 600V
= 600V
Sy
=600V