L6213 STMicroelectronics, L6213 Datasheet - Page 5

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L6213

Manufacturer Part Number
L6213
Description
MOSFET & Power Driver ICs DISC BY STM 5/00 4A SOLENOID DR
Manufacturer
STMicroelectronics
Datasheet

Specifications of L6213

Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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ELECTRICAL CHARACTERISTICS (continued)
POWER FAIL
RESET
SOLENOID CONTROL SECTION
Pin
10
10
10
13
13
13
18
18
18
17
17
17
17
17
8
8
8
8
7
7
7
7
7
9
9
EMH R
EML R
Symbol
V
V
V
V
V
V
Vsat
V
V
V
V
th-PFP
th-PFP
I
I
I
I
clamp
sense
sense
th -PFP
leak
leak
leak
PFI
t1
t2
t3
t4
I
I
t
V
thR
thF
sat
sat
d
d
p
th
on
on
Rising Threshold Voltage
Falling Threshold Voltage
Threshold Hysteresis
Divided Internal Current
Rising Threshold Voltage
Falling Threshold Voltage
Threshold Hysteresis
Output PF Saturation
Output Leakage Current
Delay to Reset
Noise Immunity
Noise Immunity
Delay Source Current
Delay Sink Current
Output RESET Saturation
Output Leakage Current
Noise Immunity
Saturation Voltage
Leakage Current
Clamp Voltage
Minimum Offset Threshold
MAximum Offset Voltage
Static Voltage Limiting
Threshold
Maximum Delay Time
Protection Time
OnStateDrai n toSource Resi s tance
OnStateDrain to SourceResistance
Vsense Hysteresis
Parameter
PFP open
PFP open
PFP open
VPS = 24V
VPS = 24V
VPS = 24V
PF current = 2.5mA
VPS = 3 to 46V
VPS = 46V VPF = 20V
RESET High to PF high
Delay Time (fig. 1)
When VPS drops to 8V for a
time from 0 to t2, PF must be
at 1 logic level (fig. 2)
When VPS drops to 17V for
a time greater than t3, PF
must be at 0 logic level (fig. 2)
V
VD = 4.3 to 2V
RESET Current = 2.5mA
VPS = 3 to 46V
VPS = 46V RD = 4 to 5V
V
When VPS drops to 10V for a
time greater than t4 RESET
must be at 0 logic level (fig. 1)
ENABLE = 1 I PIM = 5mA
PIM = 0.2 to 2.5V ENABLE = 0
PIM = GND V
ENABLE = 0
PIM = GND V
ENABLE = 0
V
PIM = 3V, the EMH DMOS
goes to high resistance state
when V
Block Diagram)
T
Tj = 25 C, VPS 15 to 46V
IST = Open
IST = 0.75V
IST = 3V
D
RESET
sens
j
= 25 C, VPS 15 to 46V
= 0 to 4.1V
going from 0 to 0.6V
Test Condition
= 20V
sens
is within: (see
se ns
sens
Fig. 1
Fig. 1
Fig. 1
= 50mV
= 10mV
lower MOS must be in conduction
0.475
Min.
19.5
16.6
0.98
0.5
1.1
1.9
30
70
10
35
15
80
0
0
4
4
2
lower MOS must be open
Typ.
18.1
1.21
1.06
0.35
0.28
100
0.5
20
50
25
2
0.525
Max.
+100
19.5
1.29
1.13
0.45
130
140
120
0.4
0.4
0.2
2.1
0.4
23
50
50
65
35
1
1
1
4
L6213
Unit
mV
mA
mV
mV
mV
V
V
V
V
V
V
V
V
V
V
A
A
A
A
A
s
s
s
s
s
s
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