ISL3178AEMBZ-T Intersil, ISL3178AEMBZ-T Datasheet
ISL3178AEMBZ-T
Specifications of ISL3178AEMBZ-T
Related parts for ISL3178AEMBZ-T
ISL3178AEMBZ-T Summary of contents
Page 1
... All other trademarks mentioned are the property of their respective owners. ISL3178AE May 6, 2009 FN6887.1 RX/TX QUIESCENT LOW POWER ENABLE? I (µA) SHUTDOWN? CC YES 510 YES YES 510 YES | Intersil (and design registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2009. All Rights Reserved 15kV . . . . ± PIN COUNT 8 N/A ...
Page 2
... NUMBER PART RANGE (Note) MARKING (°C) ISL3178AEMBZ* 3178A EMBZ -55 to +125 8 Ld SOIC ISL3178AEMW -55 to +125 *Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach ...
Page 3
Typical Application Circuit + GND 5 3 ISL3178AE ISL3178AE + 0.1µ +3.3V + 0.1µ ...
Page 4
... Thermal Resistance (Typical, Note SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Junction Temperature (Plastic Package +150°C Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . .see link below +0.3V) http://www.intersil.com/pbfree/Pb-FreeReflow.asp CC = 3.0V to 3.6V; Unless Otherwise Specified. Typicals are TEST CONDITIONS R = 100Ω (RS-422) (Figure 1A, Note 11) ...
Page 5
Electrical Specifications Test Conditions: V (Note 2). Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. PARAMETER SYMBOL SUPPLY CURRENT No-Load Supply Current (Note 3) ...
Page 6
Electrical Specifications Test Conditions: V (Note 2). Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. PARAMETER SYMBOL Receiver Enable from Shutdown to t ZH(SHDN) ...
Page 7
Test Circuits and Waveforms SIGNAL GENERATOR FIGURE 2A. TEST CIRCUIT FIGURE 2. DRIVER PROPAGATION DELAY AND DIFFERENTIAL TRANSITION TIMES SIGNAL Y GENERATOR PARAMETER OUTPUT ...
Page 8
Test Circuits and Waveforms RE B GND SIGNAL GENERATOR FIGURE 5A. TEST CIRCUIT RE B GND SIGNAL GENERATOR PARAMETER (Note (Note 6) ...
Page 9
Receivers easily meet the data rates supported by the corresponding driver, and all receiver outputs are tri-statable via the active low RE input. Driver Features The RS-485/422 driver is a differential output device that delivers at least 1.5V across a ...
Page 10
Low Power Shutdown Mode This CMOS transceiver all uses a fraction of the power required by its bipolar counterparts, but it also includes a shutdown feature that reduces the ...
Page 11
Typical Performance Curves -60 -45 -30 - TEMPERATURE (°C) FIGURE 11. DRIVER DIFFERENTIAL PROPAGATION DELAY vs TEMPERATURE) R DIFF 3.0 2.5 B/Z 2.0 ...
Page 12
Die Characteristics DIE DIMENSIONS Thickness: 19 mils 1295µm x 1350µm Interface Materials GLASSIVATION Sandwich TEOS & Nitride TOP METALLIZATION: Type: Al with 0.5% Cu Thickness: 28kA SUBSTRATE N/A BACKSIDE FINISH Silicon/Polysilicon/Oxide Assembly Related Information SUBSTRATE POTENTIAL GND (powered up) Additional ...
Page 13
Metallization Mask Layout ISL3178AE ISL3178AE VCC FN6887.1 May 6, 2009 ...
Page 14
... Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use ...