NTE5426 NTE Electronics, Inc., NTE5426 Datasheet
NTE5426
Manufacturer Part Number
NTE5426
Description
SCR; TO-220; 400V; 400V; 80A Itsm; 3.0C/W (Typ.); +100
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE5426.pdf
(2 pages)
Specifications of NTE5426
Current, Forward
10 A
Current, Reverse
0.1 mA
Current, Surge
80 A
Package Type
TO-220
Power Dissipation
16 W
Primary Type
SCR
Resistance, Thermal, Junction To Case
3 °C/W
Temperature, Junction, Maximum
+100 °C
Temperature, Operating
-40 to +100 °C
Voltage, Forward
2 V
Voltage, Reverse
400 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device
may be switched from off–state to conduction by a current pulse applied to the gate terminal and is
designed for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, T
Repetitive Peak Reverse Voltage (Gate Open, T
RMS On–State Current (T
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50 or 60Hz), I
Peak Gate–Trigger Current (3 s max), I
Peak Gate–Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Peak Off–State Current
Maximum On–State Voltage
Gate Trigger Current, Continuous DC
Gate Trigger Voltage, Continuous DC
DC Holding Current
Turn–On Time
Critical Rate of Rise of Off–State
Voltage
Parameter
Silicon Controlled Rectifier (SCR)
C
= +80 C, 180 Conduction Angle), I
stg
C
GT
opr
= +25 C and “Maximum Ratings” unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= I
G(AV)
critical
I
dv/dt
I
DRM
V
V
RRM
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t
GT
I
TM
GTM
GT
H
gt
Sensitive Gate
GTM
,
), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5426
Rated V
RG – K = 1k
I
Anode Voltage = 12V, R
Anode Voltage = 12V, R
Gate Open, RG – K = 1k
(t
Gate Open, T
RG – K = 1k
T
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
= Rated Amps
+ t
r
C
) I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
= +110 C), V
thJC
GT
Test Conditions
= +110 C), V
= 150mA
or V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +110 C,
RRM
, T
C
RRM
L
L
T(RMS)
= +110 C,
DRM
= 60
= 60
. . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
TSM
Min
–
–
–
–
–
–
–
. . . . . . . . . . . .
Typ
–
–
–
–
–
–
8
–40 to +100 C
–40 to +150 C
Max
200
0.1
2.0
0.8
3.0
2.5
–
3.0 C/W
500mW
V/ s
400V
400V
Unit
mA
mA
16W
V
V
10A
80A
A
s
1A
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NTE5426 Summary of contents
Page 1
... Silicon Controlled Rectifier (SCR) Description: The NTE5426 is silicon controlled rectifier (SCR isolated tab TO220 type package. This device may be switched from off–state to conduction by a current pulse applied to the gate terminal and is designed for control applications in lighting, heating, cooling, and static switching relays. ...
Page 2
Dia Max .070 (1.78) Max Cathode .100 (2.54) Max .110 (2.79) Isol .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Gate Anode ...