IRLMS2002GTRPBF International Rectifier, IRLMS2002GTRPBF Datasheet
IRLMS2002GTRPBF
Specifications of IRLMS2002GTRPBF
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IRLMS2002GTRPBF Summary of contents
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... Rated l Lead-Free l Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™ package with its customized leadframe ® ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V 10 1.50V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...
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1MHz iss rss 1600 oss iss 1200 800 400 C oss C rss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL ...
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Id = 5.3A 0.020 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 0.10 0.08 0.06 0.04 0.02 0 6.0 7.0 8.0 Fig 13. ...
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Micro6 (SOT23 6L) Package Outline Dimensions are shown in milimeters (inches) 3.00 (.118 ) -B- 2.80 (.111 ) 1.75 (.068 ) 3.00 (.118 ) 1.50 (.060 ) 2.60 (.103 ) - 0.95 ( .0375 ...
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Micro6 Tape & Reel Information Dimensions are shown in milimeters (inches) 4mm NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR ...