HYB39S256800DE-7 Infineon Technologies, HYB39S256800DE-7 Datasheet - Page 20

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HYB39S256800DE-7

Manufacturer Part Number
HYB39S256800DE-7
Description
Manufacturer
Infineon Technologies
Type
SDRAMr
Datasheet

Specifications of HYB39S256800DE-7

Organization
32Mx8
Density
256Mb
Address Bus
15b
Access Time (max)
5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
90mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Supplier Unconfirmed
4
4.1
Table 10
Parameter
Input / Output voltage relative to
Voltage on
Voltage on
Operating Temperature
Storage temperature range
Power dissipation per SDRAM component
Data out current (short circuit)
Attention: Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.Functional
Table 11
Parameter
Supply Voltage
I/O Supply Voltage
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input
(0 V <
Output leakage current
(DQs are disabled, 0 V <
1)
2) All voltages are referenced to
3)
Data Sheet
T
V
with 3.3V. Pulse width measured at 50% points with amplitude measured peak to DC reference
A
IH
= 0 to 70
V
may overshoot to
IN
<
operation should be restricted to recommended operation conditions. Exposure to higher than
recommended voltage for extended periods of time affect device reliability
V
V
V
Electrical Characteristics
Operating Conditions
Absolute Maximum Ratings
DC Characteristics
DD
DDQ
DD
ο
C
supply relative to
, all other inputs = 0 V)
supply relative to
I
I
OUT
OUT
V
DDQ
= 4.0 mA)
= – 4.0 mA)
V
OUT
+ 2.0 V for pulse width of < 4ns with 3.3V.
V
<
SS
V
V
1)
V
SS
DDQ
V
SS
SS
)
Symbol
V
V
V
T
T
P
I
Symbol
V
V
V
V
V
V
I
I
IL
OUT
OL
A
STG
IN,
DD
DDQ
D
DD
DDQ
IH
IL
OH
OL
V
OUT
20
Limit Values
min.
– 1.0
– 1.0
– 1.0
0
-55
min.
3.0
3.0
2.0
– 0.3
2.4
– 5
– 5
V
Values
IL
may undershoot to -2.0 V for pulse width < 4.0 ns
max.
+4.6
+4.6
+4.6
+70
+150
1
50
max.
3.6
3.6
V
+0.8
0.4
+5
+5
HYB39S256[40/80/16]0D[C/T](L)
DDQ
256-MBit Synchronous DRAM
+0.3
Unit
V
V
V
V
V
V
mA
mA
Unit
V
V
V
ο
o
W
mA
C
C
Electrical Characteristics
10072003-13LE-FGQQ
.
Note/
Test Condition
2)
2)
2)3)
2)3)
2)
2)
Note/
Test Condition
Rev. 1.02, 2004-02

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