HYB39S256160DE-7 Infineon Technologies, HYB39S256160DE-7 Datasheet - Page 16

• Manufacturer Part Number: HYB39S256160DE-7
• Manufacturer: Infineon Technologies
• Type: SDRAMr

Specifications of HYB39S256160DE-7

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 90mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Supplier Unconfirmed

MR
Mode Register Definition
Field
BL
BT
CL
Operating
Mode
Data Sheet
BA1
0
reg. addr
BA0
0
Bits
[2:0]
3
[6:4]
[13:7] w
A12
Type Description
w
w
w
A11
Burst Length
Number of sequential bits per DQ related to one read/write command, see
Chapter 3.3.1
Note: All other bit combinations are RESERVED
000 1
001 2
010 4
011 8
111 Full Page (Sequential burst type only)
Burst Type
See
0
1
CAS Latency
Number of full clocks from read command to first data valid window.
Note: All other bit combinations are RESERVED.
010 2
011 3
Operating Mode
Note: All other bit combinations are RESERVED.
0
1
Table 8
Sequential
Interleaved
burst read/burst write
burst read/single write
A10
MODE
w
for internal address sequence of low order address bits.
A9
A8
(BA[1:0] = 00
16
A7
B
A6
)
CL
A5
w
HYB39S256[40/80/16]0D[C/T](L)
256-MBit Synchronous DRAM
A4
A3
BT
w
Functional Description
10072003-13LE-FGQQ
A2
Rev. 1.02, 2004-02
BL
A1
w
A0