PMV22EN NXP Semiconductors, PMV22EN Datasheet

MOSFET, N CH, 30V, 5.2A, SOT23

PMV22EN

Manufacturer Part Number
PMV22EN
Description
MOSFET, N CH, 30V, 5.2A, SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMV22EN

Rohs Compliant
YES
Transistor Polarity
N Channel
Continuous Drain Current Id
5.2A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.017ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.5V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMV22EN
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PMV22EN
Quantity:
710
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
Table 1.
[1]
Symbol
V
I
Static characteristics
R
V
D
DS
GS
DSon
PMV22EN
30 V, 5.2 A N-channel Trench MOSFET
Rev. 1 — 30 March 2011
Logic-level compatible
Very fast switching
Relay driver
High-speed line driver
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
Quick reference data
Parameter
drain-source
voltage
gate-source
voltage
drain current
drain-source
on-state
resistance
2
.
Conditions
T
V
V
t
p
amb
GS
GS
≤ 300 µs; δ ≤ 0.01; T
= 10 V; T
= 10 V; I
= 25 °C
D
amb
= 5.2 A; pulsed;
= 25 °C
Trench MOSFET technology
Low-side loadswitch
Switching circuits
j
= 25 °C
[1]
Min
-
-20
-
-
Product data sheet
Typ
-
-
-
17
Max Unit
30
20
5.2
22
V
V
A
mΩ

Related parts for PMV22EN

PMV22EN Summary of contents

Page 1

... PMV22EN 30 V, 5.2 A N-channel Trench MOSFET Rev. 1 — 30 March 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  ...

Page 2

... 100 °C GS amb °C; single pulse; t amb °C amb ° °C amb All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 PMV22EN 30 V, 5.2 A N-channel Trench MOSFET Graphic symbol mbb076 Version SOT23 Min Max - 30 -20 20 [1] - 5.2 [1] - 3.3 ≤ ...

Page 3

... All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 30 V, 5.2 A N-channel Trench MOSFET 120 I der (%) −75 − Normalized continuous drain current as a function of ambient temperature (1) (2) (3) (4) (5) ( (V) DS PMV22EN 017aaa002 125 175 T (°C) amb 017aaa152 2 10 © NXP B.V. 2011. All rights reserved ...

Page 4

... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV22EN Product data sheet Conditions in free air – – All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 PMV22EN 30 V, 5.2 A N-channel Trench MOSFET Min Typ Max [1] - 207 245 [2] - 116 135 - ...

Page 5

... pulsed δ ≤ 0.01 ° ° MHz ° Ω G(ext ° 0. ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 PMV22EN 30 V, 5.2 A N-channel Trench MOSFET Min Typ Max 1.5 2 100 - - 100 - 480 - - 110 ...

Page 6

... Sub-threshold drain current as a function of gate-source voltage 80 DSon 60 40 ( 150 ° °C j Drain-source on-state resistance as a function of gate-source voltage; typical values PMV22EN 017aaa156 (3) 3.0 V (V) GS 017aaa158 (V) GS © NXP B.V. 2011. All rights reserved ...

Page 7

... Fig 11. Normalized drain-source on-state resistance as 017aaa161 10 C (pF 120 180 T (°C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 PMV22EN 30 V, 5.2 A N-channel Trench MOSFET – 120 a function of junction temperature; typical values 3 (1) (2) 2 (3) –1 10 ...

Page 8

... PMV22EN Product data sheet 017aaa163 (nC °C Fig 15. Gate charge waveform definitions (A) 3 (1) ( 0.0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 PMV22EN 30 V, 5.2 A N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa164 1.2 V (V) SD © ...

Page 9

... 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 PMV22EN 30 V, 5.2 A N-channel Trench MOSFET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION ...

Page 10

... All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 PMV22EN 30 V, 5.2 A N-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot023_fr solder lands solder resist occupied area ...

Page 11

... NXP Semiconductors 9. Revision history Table 7. Revision history Document ID Release date PMV22EN v.1 20110330 PMV22EN Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 PMV22EN 30 V, 5.2 A N-channel Trench MOSFET ...

Page 12

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 PMV22EN 30 V, 5.2 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 March 2011 PMV22EN 30 V, 5.2 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMV22EN All rights reserved. Date of release: 30 March 2011 Document identifier: PMV22EN ...

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