1N5062GP-E3/1 Vishay, 1N5062GP-E3/1 Datasheet
1N5062GP-E3/1
Specifications of 1N5062GP-E3/1
Related parts for 1N5062GP-E3/1
1N5062GP-E3/1 Summary of contents
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... FAV V = 600 FAV V = 800 FAV Test condition Part 1N5059 1N5060 1N5061 1N5062 = 50 °C amb = 75 °C amb = 1 A, indicutive load 1N5059 to 1N5062 Vishay Semiconductors Package SOD-57 SOD-57 SOD-57 SOD-57 Symbol Value Unit 200 V R RRM 400 V R RRM 600 V R RRM ...
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... Vishay Semiconductors Maximum Thermal Resistance °C, unless otherwise specified amb Parameter Junction ambient Lead length mm constant board with spacing 25 mm Electrical Characteristics °C, unless otherwise specified amb Parameter Forward voltage 2 Reverse current 100 µA Reverse breakdown voltage I R Reverse recovery time ...
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... SOD-57 26(1.014) min. Document Number 86000 Rev. 1.5, 13-Apr-05 1N5059 to 1N5062 0.1 V 15766 Figure 5. Typ. Diode Capacitance vs. Reverse Voltage 3.6 (0.140)max. ISO Method E 26(1.014) min. 4.0 (0.156) max. Vishay Semiconductors f =1 MHz 1 10 100 - Reverse Voltage ( 9538 0.82 (0.032) max. www.vishay.com 3 ...
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... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...