MRF157 M/A-COM Technology, MRF157 Datasheet - Page 8

• Manufacturer Part Number: MRF157
• Description: RF MOSFET Power 5-80MHz 600Watts 50Volt Gain 21dB
• Manufacturer: M/A-COM Technology

Specifications of MRF157

• Configuration: Single
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: 40 V
• Continuous Drain Current: 60 A
• Power Dissipation: 1350 W
• Maximum Operating Temperature: + 150 C
• Package / Case: Case 368-03
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: N-Channel
• Lead Free Status / Rohs Status: Details

8
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Linear RF Power MOSFET
600W, to 80MHz
MRF157
MOUNTING OF HIGH POWER RF
POWER TRANSISTORS
resistance between the device flange and the heat dissipa-
tor.
itmay be deformed during various stages of handling or
during transportation. It is recommended that the user
makes a final inspection on this before the device installa-
tion. ±0.0005, is considered sufficient for the flange bottom.
mounting area. If copper heat sink is not used, a copper
head spreader is strongly recommended between the de-
vice mounting surfaces and the main heat sink. It should be
at least 1/4, thick and extend at least one inch from the
flange edges. A thin layer of thermal compound in all inter-
faces is, of course, essential. The recommended torque on
the 4–40 mounting screws should be in the area of 4–5
lbs.–inch, and spring type lock washers along with flat
washers are recommended.
corner mounting screw area to the bottom center of the
flange is approximately 5°C and 10°C under normal operat-
ing conditions (dissipation 150 W and 300 W respectively).
have low Rθ for moderate air velocity, unless liquid cooling
is employed.
The package of this device is designed for conduction
cooling. It is extremely important to minimize the thermal
Since the device mounting flange is made of soft copper,
The same applies to the heat dissipator in the device
For die temperature calculations, the Δ temperature from a
The main heat dissipater must be sufficiently large and
becomes critical due to the low impedance levels and high
RF currents associated with the output matching. Some of
the components, such as capacitors and inductors must
also withstand these currents. The component losses are
directly proportional to the operating frequency. The manu-
facturers
specifications on capacitor ratings should be consulted on
these aspects prior to design.
ground referenced RF loops are practically eliminated, and
the impedance levels are higher for a given power output.
High power broadband transformers are also easier to de-
sign than comparable LC matching networks.
CIRCUIT CONSIDERATIONS
At high power levels (500 W and up), the circuit layout
Push–pull circuits are less critical in general, since the
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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M/A-COM Products
Released - Rev. 07.07